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SIO2/SI: 作品数：51被引量：43H指数：3; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：董树清张红丽李健安俊明王红杰更多>>; 相关机构：中国科学院上海交通大学南京大学复旦大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划上海市科学技术委员会资助项目国家高技术研究发展计划更多>>

First-principles calculations of the hole-induced depassivation of SiO2/Si interface defects: 《Chinese Physics B》2022年第5期575-581,共7页Zhuo-Cheng Hong Pei Yao Yang Liu Xu Zuo; Project supported by the Science Challenge Project(Grant No.TZ2016003-1-105);Tianjin Natural Science Foundation,China(Grant No.20JCZDJC00750);the Fundamental Research Funds for the Central Universities—Nankai University(Grant Nos.63211107 and 63201182)。; The holes induced by ionizing radiation or carrier injection can depassivate saturated interface defects.The depassivation of these defects suggests that the deep levels associated with the defects are reactivated,aff...; 关键词：a-SiO_(2)/Si interface HOLE depassivation first-principles calculation

非晶SiO2/Si界面缺陷及其钝化/去钝化反应机制被引量：2: 《系统仿真学报》2020年第12期2362-2375,共14页洪卓呈左旭; Science Challenge Project(TZ2016003-1-105);CAEP Microsystem and THz Science and Technology Foundation(CAEPMT201501);National Basic Research Program of China(2011CB606405)。; 研究非晶二氧化硅/硅(a-SiO2/Si)界面处的硅悬挂键缺陷(即Pb类缺陷)的钝化与去钝化过程对提高器件性能具有重要意义。基于分子动力学与第一性原理计算方法,以a-SiO2和晶体Si为基础,构建了a-SiO2/Si(111)界面模型。采用CI-NEB(ClimbingIm...; 关键词：第一性原理 a-SiO2/Si(111)界面钝化/去钝化 NEB方法

SiO2/Si上石墨烯薄膜的化学气相沉积法制备及其性能表征被引量：1: 《半导体光电》2019年第4期513-516,522,共5页刘喜锋张鹏博方小红陈小源; 中国科学院/国家外国专家局创新团队国际合作伙伴计划项目; 以铜为催化剂,采用聚甲基丙烯酸甲酯(PMMA)和甲烷为碳源的化学气相沉积两步法,在SiO2/Si衬底上制备了石墨烯薄膜。利用拉曼光谱分析了薄膜的层数和质量,利用光学显微镜(OM)和扫描电子显微镜(SEM)分析了薄膜的尺寸与表面形貌。实验探究...; 关键词：石墨烯化学气相沉积 SIO2/SI 铜

1 550 nm long-wavelength vertical-cavity surface emitting lasers: 《Optoelectronics Letters》2018年第5期342-345,共4页LIU Li-jie WU Yuan-da WANG Yue AN Jun-ming HU Xiong-wei; supported by the National High Technology and Development Program of China(No.2015AA016902); A 1 550 nm long-wavelength vertical cavity surface emitting laser （VCSEL） on InP substrate is designed and fabri- cated. The transfer matrix is used to compute reflectivity spectrum of the designed epitaxial layers....; 关键词：长波长表面垂直激光发射极 SIO2/SI 计算设计取向附生

Room-temperature optically pumped InAs/GaAs quantum dots microdisk lasers on SiO2/Si chip: 《Journal of Semiconductors》2018年第8期53-56,共4页Pengyi Yue Xiuming Dou Xiangbin Su Zhichuan Niu Baoquan Sun; supported by the National Key Research and Development Program of China(No.2016YFA0301202);the National Natural Science Foundation of China(Nos.11474275,61674135,91536101); We report on room temperature continuous-wave optically pumped InAs/GaAs quantum dot whispering gallery mode microdisk lasers, heterogeneously integrated on silica/silicon chips. The microdisks are fabricated by photo...; 关键词：quantum dot whispering gallery mode laser

热氧化SiO_2工艺在硅太阳电池中的应用及研究: 《电源技术》2016年第12期2371-2374,共4页李吉杨伟强魏红军严金梅王松; 采用热氧化法在晶体硅基底上生长SiO2薄膜,研究了不同厚度的SiO2氧化层对少子寿命（MCL）、光学吸收及与SiNx体钝化的影响;同时通过理论计算匹配相应的SiO2/Si Nx叠层膜,得出SiO2层厚度大约为10 nm,Si Nx膜的理论厚度在60~70 nm之间,折...; 关键词：热氧化表面钝化 SIO2薄膜 SIO2/SI Nx叠层膜

重离子辐照SiO_2/Si结构变温光致发光谱研究被引量：1: 《光散射学报》2016年第4期369-373,共5页马瑶龚敏刘鑫胥鹏飞林巍冷宏强; 国家自然科学基金项目(61176096); 本文研究了重离子辐照前后SiO_2/Si结构光学性质的变化。实验选择初始能量为414 MeV,不同辐照总剂量的Sn离子,在室温下辐照氧化层厚度为36nm和90nm的SiO_2/Si结构。并在不同测试温度下获得了辐照前后SiO_2/Si结构的光致发光谱(PL)谱。...; 关键词：重离子 SiO2/Si结构变温光致发光

中科院化学所在嵌段共聚物自组装形貌调控研究方面取得进展: 《石油化工》2016年第9期1144-1144,共1页; 中国科学院化学研究所在嵌段聚合物自组装形貌控制方法方面取得系列进展。科研人员利用石墨烯不可浸透性和界面能的可调控性，调控得到了白支撑的垂直取向嵌段聚合物薄膜。他们提出了使用表面驻极体调控嵌段聚合物的自组装形貌。利用电...; 关键词：嵌段共聚物形貌调控自组装中科院化学所中国科学院化学研究所 SIO2/SI 嵌段聚合物表面充电

Rapidly counting atomic planes of ultra-thin MoSe2 nanosheets(1≤n≤4)on SiO2/Si substrate被引量：1: 《Rare Metals》2016年第8期632-636,共5页Yi-Ping Wang Hui-Jun Zhou Gui-Hua Zhao Tian-Long Xia Lei Wang Le Wang Li-Yuan Zhang; financially supported by the Research Funds of Renmin University of China(Nos.13XNLF02 and 14XNLQ07);the National Natural Science Foundation of China(Nos.11304381,11004245,11174366 and 51202200); The optical, thermal and electrical properties of ultra-thin two-dimensional （2D） crystal materials are highly related to their thickness. Therefore, identifying the atomic planes of few-layer crystal materials rapi...; 关键词：Thickness identification Optical contrast MoSe2 Optical microscopy

Fast growth of graphene on SiO2/Si substrates by atmospheric pressure chemical vapor deposition with floating metal catalysts: 《Science China Chemistry》2016年第6期707-712,共6页Na Liu Jia Zhang Yunfeng Qiu Jie Yang PingAn Hu; supported by the National Natural Science Foundation of China (61390502, 51502059, 61172001, 21373068);the National Basic Research Program of China (2013CB632900);the Foundational Research Funds for the Central Universities (HIT. NSRIF.201641);Self-Planned Task (SKLRS201509B) of State Key Laboratory of Robotics and System (HIT);China Postdoctoral Science Foundation Grant (2015M570285);Heilongjiang Provincial Postdoctoral Science Foundation Grant (LBH-Z15053); Graphene on dielectric substrates is essential for its electronic applications. Graphene is typically synthesized on the surface of metal and then transferred to an appropriate substrate for fabricating device applica...; 关键词：GRAPHENE fast growth dielectric substrates

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