碳化硅MOSFET器件高温栅偏特性的实验分析  

Experimental Analysis on High-Temperature Gate Bias Characteristics of Silicon Carbide MOSFET Devices

作　　者：徐鹏[1] 邹琦 谢宗奎[1] 柯俊吉 赵志斌[1] Xu Peng;Zou Qi;Xie Zongkui;Ke Junji;Zhao Zhibin(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Source（North China Electric Power University）,Beijing 102206,China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学)

出　　处：《半导体技术》2018年第10期752-759,共8页Semiconductor Technology

基　　金：国家重点研发计划资助项目(2016YFB0400503)

摘　　要：为了评估不同电热应力和时间周期下碳化硅（Si C）金属氧化物半导体场效应晶体管（MOSFET）的高温栅偏特性,搭建了具备施加高温栅偏应力和测量器件静态特性以及两者快速切换的实验平台。从施加高温栅偏应力、去除应力后室温下短期恢复和长期恢复3个不同阶段研究了SiC MOSFET静态参数对高温栅偏应力的敏感度,以及不同时间周期范围内阈值电压的恢复能力。实验结果表明,高温栅极正偏压和高温环境存储都会导致器件阈值电压的正向漂移,室温施加栅极正偏压,器件阈值电压几乎不发生漂移。此外,长时间高温栅偏后,室温条件下器件的导通电阻和泄漏电流都表现出十分优异的稳定性。然而,高温栅偏后器件阈值电压的漂移程度还取决于恢复时间,恢复时间越长,阈值电压漂移程度越小。An experimental platform with the capabilities of applying high-temperature gate bias stress,the measurement of static characteristics for the device and the fast switching between the devices was built,in order to evaluate the high-temperature gate bias characteristics of silicon carbide（ SiC）metal oxide semiconductor filed effect transistors（ MOSFETs） under different electrothermal stress and time cycles. Moreover,these two functions can be rapidly switched each other. The sensitivity of Si C MOSFET＇s static parameters to high-temperature gate bias and the threshold voltage recovery ability in different time periods were studied from three different phases,such as high temperature gate bias,shortterm recovery and long-term recovery at room temperature after stress removal. The experimental results show that high-temperature gate positive bias and high-temperature environment storage will lead to the positive shift of the threshold voltage. When the gate is positively biased at room temperature,there is no obvious drift of the device＇s threshold voltage. In addition,the on-resistance and the leakage current of the device exhibit excellent stability at room temperature after a long period of high-temperature gate bias experiment. However,the drift of the device＇s threshold voltage after the high-temperature gate bias also depends on the recovery time. The longer the recovery time,the smaller the threshold voltage drift.

关 键 词：碳化硅(SiC)MOSFET 高温栅偏 静态特性 灵敏度 恢复时间 

分 类 号：TN386[电子电信—物理电子学]