三维硅基电容器W薄膜电极特性及影响  

Characteristics and Effects of W Thin Films Used as the Electrodes on 3D Silicon Capacitors

作　　者：穆继亮 耿文平[1,2] 何剑 丑修建[1,2] Mu Jiliang;Geng Wenping;He Joan;Chou Xiujian(School of Instrument and Electronics;Science and Technology on Electronic Test and Measurement Laboratory,North University of China,Taiyuan 030051,China)

机构地区：[1]中北大学仪器与电子学院,太原030051 [2]中北大学国防科技重点实验室,太原030051

出　　处：《半导体技术》2018年第10期771-776,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61471326)

摘　　要：设计了一种三维（3D）硅基电容器,采用原子层沉积（ALD）技术制备了钨（W）薄膜电极。通过X射线光电子能谱（XPS）、X射线衍射（XRD）、扫描电子显微镜（SEM）和电学分析仪对薄膜进行表征,研究了W薄膜电学性能的影响因素和作用机制。XPS测试结果表明,W薄膜组分主要为W—W键金属态,测得其电阻率为77μΩ·cm,达到现有技术水平。由晶相分析可知,原子层沉积W薄膜是多晶相,且两端电极薄膜中均存在α-W和β-W两种晶相,其中,β-W相是导致电阻率升高的主要因素。最后,对电容器进行了C-V和I-V测试,结果表明,对于3D电容器,所制备的W薄膜电极具有良好的电学性能。A three dimensional（ 3 D） silicon-based capacitor was designed,and its electrodes of tungsten（ W） thin films were fabricated by using the atomic layer deposition（ ALD） technology. The thin films were characterized by the X-ray photoelectron spectroscope（ XPS）,X-ray diffraction（ XRD）,scan electronic microscope（ SEM） and electrical analyzer. The influence factors and mechanisms of electrical properties of W thin films were investigated. The XPS test results show that the W thin films are mainly composited of W—W bonds in metal states,and the resistivity is 77 μΩ·cm,which reaches the current level of technology. Besides,it is found that the crystalline phases of the ALD thin films as both top and bottom electrodes are polycrystalline phase composing of α-W and β-W. And the β-W phase usually results in high resistivity of the films. Finally,the C-V and I-V characteristics of the capacitors were measured. The results indicate that the prepared W thin films for 3 D capacitors have good electrical properties.

关 键 词：硅基 三维(3D)电容器 原子层沉积(ALD) 钨薄膜 金属态 

分 类 号：TN305[电子电信—物理电子学] O484.4[理学—固体物理]