Nd∶BiFeO3/Nb∶SrTiO3异质结的电阻变换效应  

Resistive Switching Effects of the Nd∶ BiFeO3/Nb∶ SrTiO3 Heterostructures

作　　者：王强文 郭育华[1] Wang Qiangwen;Guo Yuhua(The 38th Research Institute,CETC,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第三十八研究所

出　　处：《半导体技术》2018年第10期777-781,794,共6页Semiconductor Technology

基　　金：装备预先研究项目(41423070115)

摘　　要：研究了Nd∶BiFeO3（NBFO）/Nb∶SrTiO3（NSTO）异质结构的电阻变换效应并讨论其铁电阻变换机理。利用脉冲激光沉积（PLD）法在NSTO单晶衬底上生长了NBFO薄膜,并构筑了Pt/NBFO/NSTO异质结构。该异质结器件在电压脉冲扫描下显示出双极性的电阻变换效应,并且具有长时间的数据保持能力。且改变脉冲电压的大小可获得多级电阻态,在多级非易失性存储器方面有着较高的潜在应用价值。对其电输运特性的分析表明,该异质结电阻变换可能来源于NBFO的铁电场效应作用,从而改变NBFO/NSTO异质结的耗尽层宽度和势垒高度以实现电阻变换。The resistive switching effect of Nd∶ BiFeO3（ NBFO）/Nb∶ SrTiO3（ NSTO） heterostructure and the mechanism was researched and the mechanism of ferroelectric resistive switching was discussed. The NBFO thin films were epitaxially grown on the NSTO single-crystal substrate by pulsed laser deposition（ PLD） method to form Pt/NBFO/NSTO heterostructure. The device with Pt/NBFO/NSTO heterojunction exhibits bipolar resistance switching effect and long data retention under pulse voltage scanning. Moreover,the multilevel resistance states can be obtained by changing the magnitude of Set or Reset pulse voltages,which shows a high potential application for multilevel nonvolatile memory. It is concluded that the observed resistive switching behavior in the Pt/NBFO/NSTO heterostructure is related to the modulation of NBFO/NSTO interface＇s depletion width and barrier height,which is caused by the NBFO ferroelectric polarization field effect.

关 键 词：异质结 电阻变换 铁电场效应 极化翻转 势垒调控 

分 类 号：TN304.7[电子电信—物理电子学]