介质阻挡放电等离子体处理对聚酰亚胺表面放电的影响  

Influence of Dielectric Barrier Discharge Plasma Treatment on the Surface Discharge of Polyimide Film

作　　者：张兴涛[1] 吴广宁[1] 杨雁[1] 吴旭辉[1] 雷毅鑫 钟鑫[1] ZHANG Xingtao;WU Guangning;YANG Yan;WU Xuhui;LEI Yixin;ZHONG Xin(College of Electrical Engineering,Southwest Jiaotong University,Chengdu 610031,China)

机构地区：[1]西南交通大学电气工程学院

出　　处：《高电压技术》2018年第9期3097-3104,共8页High Voltage Engineering

基　　金：国家杰出青年基金(51325704);工程电介质及其应用教育部重点实验室(哈尔滨理工大学)开放课题(KF20151109)~~

摘　　要：为了研究方波脉冲下低温等离子体对聚酰亚胺（polyimide,PI）表面放电的影响,采用介质阻挡放电（dielectric barrier discharge,DBD）在大气压空气中产生功率密度为24.5 W/cm3低温等离子体,并对PI薄膜表面进行不同时间的等离子体改性,通过扫描电子显微镜（scanning electron microscope,SEM）观测其微观形貌、傅里叶红外光谱（Fourier transform infrared spectroscopy,FTIR）研究其化学结构变化,同时测试其表面电导率和耐电晕时间。研究结果表明：等离子体在PI薄膜表面引入了极性官能团;随着改性时间的增大,其表面电导率逐渐增大,而PI薄膜的耐电晕时间则先增大后减小,且当改性时间为10 s时,其耐电晕时间最大,相对于未改性的PI膜提高了17.7%;一定程度的等离子体处理（〈10 s）可增加PI薄膜表面的电荷扩散速率和电荷注入难度,从而增强耐电晕寿命;处而理时间过长（〉20 s）,则会对薄膜造成严重刻蚀,产生许多沟壑和微孔,加大电荷的注入和对高分子链的破坏,从而减小耐电晕寿命。In order to study the effect of nonthermal plasma treatment on the surface discharge of polyimide（PI） under the impulse voltage, nonthermal plasma with a power density of 24.5 W/cm3 was generated by dielectric barrier discharge（DBD） in atmospheric pressure air, and the surface of PI films was treated by plasma at different time. Scanning electron microscope（SEM） and fourier transform infrared spectroscopy（FTIR） were used to observe their micro morphology and change of chemical structures respectively, and their surface conductivity and corona resistance time were also tested. The results indicate that a number of polar functional groups are introduced on the surface of PI thin films.Besides, the surface conductivity increases gradually with the increase of the modified time, but the corona resistance time of PI thin film first increases and then decreases. When the modified time is 10 s, the corona resistance time is the longest, and increases by 17.7% compared with that of the unmodified PI film. It is found that a certain degree of plasma treatment（less than 10 s） can increase the charge diffusion rate and charge injection on the surface of PI thin films so as to increase the corona resistance time. However, excessive modified time（more than 20 s） will cause serious etching of the film and result in a lot of gully and micro holes, which is conducive to the injection of charge and the destruction of the polymer chain, and thus to reduce the corona resistance life.

关 键 词：介质阻挡放电 聚酰亚胺 方波脉冲 表面放电 傅里叶红外光谱 耐电晕 

分 类 号：U264.1[机械工程—车辆工程]