双氧水稳定剂对碱性铜膜抛光液稳定性的影响  

Effect of Hydrogen Peroxide Stabilizer on the Stability of the Alkaline Copper Slurry

作　　者：王建超 刘玉岭 牛新环 张凯 Wang Jianchao;Liu Yuling;Niu Xinhuan;Zhang Kai(School of Electronics and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《微纳电子技术》2018年第11期840-843,854,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61504037);国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308);河北省青年自然科学基金资助项目(F2015202267);河北省研究生创新资助项目(220056)

摘　　要：化学机械抛光（CMP）是多层铜布线的关键技术之一。随着集成电路的发展,碱性抛光液将逐渐成为研究热点。而双氧水作为抛光液中最常用的氧化剂,其最大问题是导致抛光液不稳定。在此基础上研究了双氧水稳定剂（聚天冬氨酸钾（PASP））对碱性铜膜抛光液去除速率及稳定性的影响。结果表明,在含有胺类络合剂的两种碱性铜膜抛光液中,双氧水稳定剂的加入会在一定程度上提高铜的去除速率。在2 h内,双氧水稳定剂对抛光液的稳定性起到了明显效果,但随时间的增加其会逐渐失去作用,甚至使抛光液变得更加不稳定。The chemical mechanical polishing（CMP）is one of the key techniques of the multilayered copper wiring.With the development of integrated circuits,the alkaline slurry will gradually become a research hotspot.With the hydrogen peroxide as a commonly used oxidant in the polishing slurry,the most serious problem is that the slurry become unstable.On this basis,the effects of a hydrogen peroxide stabilizer（potassium polyaspartate（PASP））on the removal rate and the stability of the alkaline copper slurry were studied.The results show that in two kinds of alkaline copper slurries containing amine complexants,the addition of the hydrogen peroxide stabilizer will increase the copper removal rate to a certain extent.The hydrogen peroxide stabilizer has a positive effect on the stability of the slurry within 2 h.However,it will gradually lose the function over time,and make the slurry more unstable.

关 键 词：铜 化学机械抛光(CMP) 双氧水 稳定剂 去除速率 

分 类 号：TN305.2[电子电信—物理电子学]