高碘酸钾和双氧水对Cu,Ru和TaN去除速率影响的对比  

Effect Comparisons of KIO4 and H2O2 on Removal Rates of Cu,Ru and TaN

作　　者：王庆伟 周建伟 王辰伟 王子艳 张佳洁 Wang Qingwei;Zhou Jianwei;Wang Chenwei;Wang Ziyan;Zhang Jiajie(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《微纳电子技术》2018年第11期849-854,共6页Micronanoelectronic Technology

基　　金：国家中长期科技发展规划02科技重大专项(2009ZX02308)

摘　　要：Ru/TaN双分子层已经逐渐成为替代传统双分子阻挡层Ta/TaN的最佳选择,而在不同氧化体系中针对Cu,Ru和TaN三种金属去除速率的研究并不多。分别在H_2O_2和KIO_4两种氧化体系中,通过化学机械抛光（CMP）和电化学研究了Cu,Ru和TaN的去除速率及去除机理。测试结果表明：H_2O2和KIO_4均可以通过氧化Cu,Ru和TaN三种金属的表面从而提高三种材料的去除速率。不同的是,使用KIO_4作为氧化剂可以得到一个更高的Ru去除速率和更高的去除速率选择性,其原因为Ru在KIO_4溶液中更易于形成可溶的RuO_4^-和RuO_4^（2-）离子。此外,通过原子力显微镜（AFM）分别测试了Cu,Ru和TaN三种金属的表面粗糙度,结果表明：对比KIO_4,在H_2O_2抛光体系中Cu,Ru和TaN可以得到更好的表面质量。The Ru/TaN bilayer gradually becomes the best alternative to replace the traditional Ta/TaN bilayer barrier.However,there are few studies on the removal rates of Cu,Ru and TaN in different oxidation systems.The removal rate and removal mechanism of Cu,Ru and TaN were studied by chemical mechanical polishing（CMP）and electrochemistry in H_2O_2 and KIO_4 oxidation systems,respectively.The test results show that both H_2O_2 and KIO_4 can improve the removal rates of the three kinds of materials by oxidizing the surfaces of Cu,Ru and TaN metals.The difference is that a higher Ru removal rate and higher removal rate selectivity are obtained by using KIO_4 as the oxidant,because Ru in KIO_4 solution is more prone to form soluble RuO_4^- and RuO_4^（-2） ions.In addition,the surface roughness of Cu,Ru and TaN were tested by the atomic force microscopy（AFM）,respectively.The results show that compared with KIO_4,Cu,Ru and TaN can obtain better surface quality in H_2O_2 polishing system.

关 键 词：钌(Ru) 氮化钽(TaN) 化学机械抛光(CMP) 双氧水 去除速率 

分 类 号：TN305.2[电子电信—物理电子学]