浸没式光刻机对焦控制技术研究  

Focus Control Technology in Immersion Lithography

作　　者：段晨 宗明成[1,2,3] 范伟 孟璐璐 Duan Chen;Zong Mingcheng;Fan Wei;Meng Lulu(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China;Key Laboratory of Microelectronics Devices ＆ Integrated Technology,Institute of Microelectronics Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院大学,北京100049 [3]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029

出　　处：《光学学报》2018年第9期187-192,共6页Acta Optica Sinica

基　　金：国家科技重大专项(2017ZX02101006-003)

摘　　要：随着大规模集成电路芯片制造步入十几纳米技术节点时代,光刻机的对焦控制变得越来越困难,其精度需要达到几十纳米。基于实际的光刻机对焦控制系统架构和光刻对焦原理,开展了浸没光刻对焦控制统计分析方法研究。根据系统结构分析出一系列误差源,研究了这些误差对总离焦误差的贡献方式及其与总离焦误差的关系。研究结果表明:由于光刻对焦误差中存在非正态分布的误差贡献项,常规正态统计分布使用的3_σ原则就无法满足99.7%的对焦成功率要求;在28,14,7nm技术节点集成电路芯片制造过程中,采用3_σ和4_σ原则得到的浸没光刻工艺总对焦成功率之差分别为28.4%、55.1%、62.9%。为了达到99.7%的对焦成功率,浸没式光刻机对焦控制应采用4_σ原则。As large-scale integrated circuit chips manufacturing steps into the era of tens of nanometers technology node,the focus control of the lithography machine becomes more and more difficult with the precision of several tens of nanometers.In this paper,a statistical analysis method of immersion lithography focusing control is studied based on the architecture and lithography focusing principle of actual lithography machine focusing control system.A series of error sources are obtained based on the system structure,and their contribution way and relationship to the total defocus error are investigated.The results show that due to the non-normal distribution error contribution term in lithography focusing error,the 3σ principle used in the normal statistical distribution can not meet the 99.7%focusing success rate requirement.In the manufacturing process of 28,14,7 nm technology node integrated circuit chips,the difference of the total focusing success rates of immersion lithography can be as high as 28.4%,55.1% and 62.9%,when 3σ and 4σ principles are used respectively.In order to reach 99.7%focusing success rate,the 4σ principle should be used in the focus control of immersion lithography.

关 键 词：光学设计 浸没光刻 对焦控制 误差 集成电路 

分 类 号：O436[机械工程—光学工程]