Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates  

作　　者：Yi Gu Hui-Jun Zheng Xi-Ren Chen Jia-Ming Li Tian-Xiao Nie Xu-Feng Kou 顾义;郑慧君;陈熙仁;李家明;聂天晓;寇煦丰(Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences;School of Information Science and Technology, Shanghai Tech University;University of Chinese Academy of Sciences;School of Physical Science and Technology, Shanghai Tech University;Shanghai Institute of Technical Physics, Chinese Academy of Science;Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University)

机构地区：[1]Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050 [2]School of Information Science and Technology,ShanghaiTech University,Shanghai 201210 [3]School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210 [4]Shanghai Institute of Technical Physics,Chinese Academy of Science,Shanghai 200083 [5]Fert Beijing Institute,BDBC,and School of Electronic and Information Engineering,Beihang University,Beijing 100191 [6]University of Chinese Academy of Sciences,Beijing 100049

出　　处：《Chinese Physics Letters》2018年第8期62-65,共4页中国物理快报（英文版）

基　　金：Supported by the National Key Research and Development Program of China under Grant Nos 2017YFB0405704 and 2017YFA0305400;the 1000-Young Talent Program of China;the Shanghai Sailing Program under Grant No 17YF1429200

摘　　要：We report the epitaxial growth of single-crystalline Cd Te（100） thin films on Ga As（100） substrates using molecular beam epitaxy. By controlling the substrate pre-heated temperature with adjustable Te flux, three different reconstructed surfaces are realized, and their influence on the subsequent Cd Te growth is investigated. More importantly, we find that both the presence of a thin native oxide layer and the formation of Ga-As-Te bonds at the interface enable the growth along the（100） orientation and help to reduce the threading dislocations and other defects. Our results provide new opportunities for compound semiconductor heterogeneous growth via interfacial engineering.We report the epitaxial growth of single-crystalline Cd Te（100） thin films on Ga As（100） substrates using molecular beam epitaxy. By controlling the substrate pre-heated temperature with adjustable Te flux, three different reconstructed surfaces are realized, and their influence on the subsequent Cd Te growth is investigated. More importantly, we find that both the presence of a thin native oxide layer and the formation of Ga-As-Te bonds at the interface enable the growth along the（100） orientation and help to reduce the threading dislocations and other defects. Our results provide new opportunities for compound semiconductor heterogeneous growth via interfacial engineering.

关 键 词：Thin Films Grown on GaAs Te Ga SUBSTRATES Cd RHEED 

分 类 号：O484[理学—固体物理]