云南高校图书馆联盟文献共享服务平台- RHEED

RHEED: 作品数：82被引量：130H指数：5; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：丁召周勋罗子江秦福文张鹰更多>>; 相关机构：大连理工大学中国科学院贵州大学电子科技大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金博士科研启动基金贵州省优秀科技教育人才省长资金项目国家重点基础研究发展计划更多>>

表面形貌对GaAs生长速率测量的影响: 《原子与分子物理学报》2023年第2期153-157,共5页江玉琪张丹懿王一丁召郭祥; 国家自然科学基金(61564002,11664005);贵州省科学技术基金(黔科合基础[2020]1Y271);贵州大学培育项目(贵大培育[2019]58号);半导体功率器件可靠性教育部研究中心开放基金(ERCME-KFJJ2019-(07))。; 本文利用Reflection High Energy Electron Diffraction(RHEED)强度振荡测量GaAs同质外延生长,发现其生长速率随生长厚度按一定指数函数关系衰减.这种衰减与GaAs表面形貌的变化密切相关,表面台阶数量的增加使层状生长模式由2D成核模式...; 关键词：RHEED GAAS 表面形貌生长速率 STM

Design of a novel correlative reflection electron microscope for in-situ real-time chemical analysis: 《Chinese Physics B》2021年第12期334-338,共5页Tian-Long Li Zheng Wei Wei-Shi Wan; Project supported by the Shanghai Tech University and the National Natural Science Foundation of China(Grant No.11774039)。; A novel instrument that integrates reflection high energy electron diffraction(RHEED),electron energy loss spectroscopy(EELS),and imaging is designed and simulated.Since it can correlate the structural,elemental,and s...; 关键词：reflection high energy electron diffraction(RHEED) electron energy loss spectroscopy(EELS) parallel detection energy-filtered electron microscopy

GaAs(001)薄膜的表面形貌相变和表面重构: 《功能材料》2021年第3期3098-3103,共6页刘雪飞吕兵罗子江王继红郭祥杨秀璋; 国家自然科学基金资助项目(11664005);贵州省科技计划资助项目(黔科合基础〔2019〕1041号,黔科合基础〔2020〕1Y021,黔科合基础〔2020〕1Y279)。; 从原子级平坦的GaAs(001)-β2(2×4)重构表面出发,结合Reflection High Energy Electron Diffraction(RHEED)衍射图像演变和不同尺度的Scanning tunneling microscope(STM)实空间扫描图像,获取GaAs(001)薄膜表面形貌相变和表面重构的重...; 关键词：GAAS(001) 形貌相变表面重构 RHEED STM

Structural Characterization of Thin Epitaxial GaN Films on Polymer Polyimides Substrates by Ion Beam Assisted Deposition: 《Advances in Materials Physics and Chemistry》2020年第9期199-206,共8页Sri Vidawati Jürgen W. Gerlach Benjamin Herold Bernd Rauschenbach; The Epitaxial GaN thin films have been fabricated by Ion Beam Assisted Deposition (IBAD) process using nitrogen ions with hyperthermal energies on the polyimides polymer substrates. By applying with the Reflection of ...; 关键词：Ion Beam Assisted Deposition Hexagonal GaN Thin Film SEM Quantum Design Physical Properties Measurement System RHEED

Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates被引量：2: 《Chinese Physics Letters》2018年第8期62-65,共4页Yi Gu Hui-Jun Zheng Xi-Ren Chen Jia-Ming Li Tian-Xiao Nie Xu-Feng Kou; Supported by the National Key Research and Development Program of China under Grant Nos 2017YFB0405704 and 2017YFA0305400;the 1000-Young Talent Program of China;the Shanghai Sailing Program under Grant No 17YF1429200; We report the epitaxial growth of single-crystalline Cd Te（100） thin films on Ga As（100） substrates using molecular beam epitaxy. By controlling the substrate pre-heated temperature with adjustable Te flux, three ...; 关键词：Thin Films Grown on GaAs Te Ga SUBSTRATES Cd RHEED

High-Quality FeTe_(1-x)Se_x Monolayer Films on SrTiO_3(001) Substrates Grown by Molecular Beam Epitaxy: 《Chinese Physics Letters》2017年第10期78-82,共5页Zhi-Qing Han Xun Shi Xi-Liang Peng Yu-Jie Su Shan-Cai Wang; Supported by the Ministry of Science and Technology of China under Grant Nos 2015CB921000,2016YFA0401000,2015CB921301 and 2016YFA0300300;the National Natural Science Foundation of China under Grant Nos 11274381,11574371,11274362,1190020,11334012 and 11674371; We report the growth process of FeTe1-xSex （0 〈 x 〈 1） monolayer films on SrTi03 （STO） substrates through molecular beam epitaxy and discuss the possible ways to improve the film quality. By exploring the parame...; 关键词：Substrates Grown by Molecular Beam Epitaxy x)Sex Monolayer Films on SrTiO3 STO RHEED

In Situ Electronic Structure Study of Epitaxial Niobium Thin Films by Angle-Resolved Photoemission Spectroscopy被引量：1: 《Chinese Physics Letters》2017年第7期232-236,共5页向兀刘吉山李明颖杨海峰刘正太樊聪聪沈大伟王镇刘志; Supported by the National Key Research and Development Program of China under Grant No 2016YFA0300204;the National Natural Science Foundation of China under Grant Nos 11274332,11574337,11404360 and 11227902;the Natural Science Foundation of Shanghai under Grant No 14ZR1447600;the Strategic Priority Research Program(B) of the Chinese Academy of Sciences under Grant No XDB04040300;the Youth Innovation Promotion Association CAS; High-quality single crystalline niobium films are grown on a-plane sapphire in molecular beam epitaxy. The film is single crystalline with a （110） orientation, and both the rocking curve and the reflection high-ener...; 关键词：ARPES RHEED

MBE外延InSb基CdTe工艺研究被引量：5: 《激光与红外》2017年第4期474-478,共5页王丛刘铭王经纬尚林涛周立庆; 成功制备了CdTe/InSb复合衬底,为长波HgCdTe外延提供了可能。通过工艺研究解决了InSb氧化层去除及In元素扩散控制两个难点问题,使用As钝化法可以解决双腔衬底转移的问题,在常用的退火工艺下,通过厚度的调整可以阻挡In元素的扩散。; 关键词：MBE CdTe/InSb RHEED In扩散 SIMS

PbTe(111)薄膜的分子束外延生长及其表面结构特性被引量：1: 《物理化学学报》2017年第2期419-425,共7页吴海飞陈耀徐珊瑚鄢永红斯剑霄谭永胜; 国家自然科学基金(51202149;51302248;11575116;61405118)资助项目~~; 采用分子束外延(MBE)方法在Ba F_2(111)衬底上直接外延生长了Pb Te薄膜。反射高能电子衍射(RHEED)实时监控的衍射图样揭示了Pb Te在Ba F_2(111)表面由三维生长向二维生长的变化过程。转动对称性的研究结合第一性原理密度泛函理论(DFT)...; 关键词：表面重构 DFT RHEED 转动对称性 PbTe薄膜

RHEED实时监控下MBE外延InAs/GaAs量子点: 《凯里学院学报》2016年第6期19-24,共6页潘金福丁光辉; 采用分子束外延方法,通过RHEED的实时监控在Ga As(001)衬底上外延生长In As量子点.利用改变生长厚度(1.7,1.8,2.0,3.0 m L),结合RHEED衍射花样与STM扫描图片,获得In As量子点表面形貌与生长层数的对应关系,揭示了In As/Ga As量子点的生...; 关键词：MBE RHEED图像 INAS量子点 STM图像

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