磷掺杂碳化硅的制备及其影响因素  

Preparation of Phosphorus Doped-Silicon Carbide and Influence Factors

作　　者：袁密 高峰 竺昌海 郑雨佳 李梓烨 薛俊[1,2] 曹宏 YUAN Mi;GAO Feng;ZHU Changhai;ZHENG Yujia;LI Ziye;XUE Jun;CAO Hong(School of Materials Science and Engineering,Wuhan Institute of Technology,Wuhan 430205,China;Engineering Research Center of Environmental Materials and Membrane Technology of Hubei Province,Wuhan 430074,China)

机构地区：[1]武汉工程大学材料科学与工程学院,湖北武汉430205 [2]湖北省环境材料与膜技术工程技术研究中心,湖北武汉430074

出　　处：《武汉工程大学学报》2018年第5期538-542,共5页Journal of Wuhan Institute of Technology

基　　金：国家自然科学基金(71303180);国家科技支撑计划项目(2013BAB07B05);武汉工程大学研究生教育创新基金(CX2017010)

摘　　要：以葡萄糖粉剂为碳源,沉淀白炭黑为硅源,磷酸为掺杂源,通过碳热还原法制备了磷掺杂碳化硅(SiC)。并利用X射线衍射仪、紫外可见吸收光谱仪、扫描电子显微镜、比表面积测试仪等对不同合成温度、不同掺杂浓度下所制备样品物相组成、微观形貌以及性质进行了表征。结果表明,磷原子进入SiC晶格,形成了磷掺杂3C-SiC。所制备的SiC样品与白炭黑的微观结构相似,其一次粒子平均粒径约150 nm,最高比表面积84.4 m^2/g。当n(P)∶n(Si)≥0.01时,掺杂达到饱和。随着温度升高,SiC禁带宽度降低,1 350℃后变化微弱,1 400℃时,比表面积最大。合成磷掺杂SiC的原料廉价易得,工艺简单,有望实现工业化生产。Phosphorus doped silicon carbide（SiC）was synthesized using glucose powder as carbon source,carbon-white as silicon source and phosphoric acid as the doping source via carbo thermal reduction method.The phase composition,micromorphology and properties of the samples were characterized by X-ray diffraction,Ultraviolet visible absorption detector,scanning electron microscopy and surface area analyzer. The resultsshowed that phosphorus atoms incorporated into the SiC lattice sites,forming phosphorus doped 3 C-SiC. Themicrostructure of synthesized SiC samples was similar to that of carbon-white,and the mean particle size ofprimary particle of SiC was 150 nm. The maximal specific surface area of the SiC was 84.4 m2/g. The dopingreached a saturation point when n（P）∶n（Si）≥0.01. The band gap of SiC decreased with the increase of thetemperature,however,it changed slightly at temperatures above 1 350 ℃,and the specific surface area was thebiggest at 1 400 ℃. It is expected to accomplish the large-scale production of doped silicon carbide with cheap and available raw materials used in the present study.

关 键 词：碳化硅 磷掺杂 碳热还原法 禁带宽度 比表面积 影响因素 

分 类 号：O613.7[理学—无机化学]