500 V高压平面功率VDMOS场效应晶体管结构参数优化  

The optimization of 500 V high-voltage VDMOSFET structure parameters

作　　者：李媛 周涛 焦书豪 LI Yuan;ZHOU Tao;JIAO Shuhao(College of New Energy,Bohai University,Jinzhou 121013,China)

机构地区：[1]渤海大学新能源学院,辽宁锦州121013

出　　处：《渤海大学学报（自然科学版）》2018年第3期263-268,共6页Journal of Bohai University:Natural Science Edition

基　　金：国家自然科学基金项目(No:11304020)

摘　　要：击穿电压是VDMOS器件的重要构造参数之一,它和漏极最大电流IDMAX一同限制了该器件的运转范围.由于击穿电压的范围随功率器件运用范围的不同而出现较大差异,故本文利用Silvaco-TCAD的仿真平台对设定击穿电压为500 V的VDMOS进行结构参数设计与优化.首先对VDMOS设计出合适的外延层参数即外延层掺杂浓度NB和外延层厚度W_e;然后用ATHENA软件对VDMOS进行工艺仿真,得出结果:对VDMOS进行提取的各结构参数与预计相符;最后又通过ATLAS软件对VDMOS的转移特性,击穿特性及输出特性进行仿真,得到的阈值电压及击穿电压与所要求的数值吻合.因此,通过对500 V VDMOS结构参数的优化和改进,从而实现高性能VDMOS器件的高可靠性.The breakdown voltage is one of the important structural parameters of VDMOS device, which limits the operating range of the device together with the maximum current of the drain electrode. The range of breakdown voltage varies greatly with the range of power devices. Therefore, this paper uses Silvaco - TCAD simulation platfoml to design and optimize the structure parameters of VDMOS with a breakdown voltage of 500V. First, the proper epitaxial layer parameters namely the epitaxial doping concentration （Ns） and thickness of epi- taxial layer （ IF-e ） , were designed for VDMOS. Then the process simulation of VDMOS was carried out by ATHE- NA software and the results were obtained： the structural parameters extracted from VDMOS are in accordance with the expected results. Finally, the transfer, breakdown and output characteristics of VDMOS are simulated by ATLAS software, and the obtained threshold voltage and breakdown voltage are consistent with the required values. Therefore, by optimizing and improving the structural parameters of 500 V VDMOS, high reliability of high -perfommnce VDMOS devices can be realized.

关 键 词：击穿电压 工艺仿真 转移特性 输出特性 

分 类 号：TN386.1[电子电信—物理电子学]