InGaAs热光伏电池器件和系统研究  

The study of device fabrication and system integration of InGaAs thermophotovoltaic cells

作　　者：龙军华 谭明[2] 季莲[2] 肖梦 吴渊渊[2] 陆书龙[1,2] 代盼[2] 李雪飞[2] 金山 邢志伟 鲁姣 杨文献 LONG JunHua;TAN Ming;JI Lian;XIAO Meng;WU YuanYuan;LU ShuLong;DAI Pan;LI XueFei;JIN Shan;XING ZhiWei;LU Jiao;YANG WenXian(School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China;Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences Suzhou 215123,China)

机构地区：[1]中国科学技术大学纳米技术与纳米仿生学院,合肥230026 [2]中国科学院苏州纳米技术与纳米仿生研究所中国科学院纳米器件与应用重点实验室,苏州215123

出　　处：《中国科学：物理学、力学、天文学》2018年第11期70-79,共10页Scientia Sinica Physica,Mechanica & Astronomica

基　　金：国家自然科学基金(编号:61704186;61774165;61534008);中国科学院重点前沿科学项目(编号:QYZDB-SSW-JSC014);中国科学院BIC对外合作项目(编号:121E32KYSB20160071)资助;江苏省重点研发项目(编号:BE2016085)

摘　　要：InGaAs电池具有吸收带隙低,效率高,稳定性好的优点,广泛应用于热光伏(TPV)器件.本文从材料生长,器件制造和系统综合方面研究了InP衬底上0.73 eV In_(0.53)Ga_(0.47)As晶格匹配和0.6 eV In_(0.68)Ga_(0.32)As晶格失配热光伏电池.通过缓冲层厚度计算,分析了组分波浪上升式InAsP结构的应力弛豫机制,单层缓冲层厚度150 nm时能够释放84%的失配应力.晶格匹配In_(0.53)Ga_(0.47)As和晶格失配In_(0.68)Ga_(0.32)As室温光致发光波长分别为1.69和2.05μm.在AM1.5G标准光谱下, 0.73和0.6 eV InGaAs TPV电池的转换效率分别为12.38%和8.41%.然而在1323 K辐射温度下, 0.6 eV InGaAs TPV电池的转换效率超过0.7 eV InGaAs TPV电池,利用黑体辐射公式标定后转换效率分别达到26.9%和25.4%.搭建了热光伏原理样机系统,通过InGaAs热光伏电池串并联方式,实现了1470 K辐射温度下5 W的输出功率,完成了热辐射能到电能的稳定转换.InGaAs cells have the advantages of low absorption bandgap, high efficiency and great stability, which are widely used in thermophotovoltaic （TPV） devices. In this paper, the material growth, device fabrication and system integration of 0.73 eV In0.53Ga0.47As （lattice matched to InP substrate） and 0.6 eV In0.68Ga0.32As （lattice mismatched to InP substrate） thermophotovoltaic cells are studied, respectively. Based on the calculation of buffer layer thickness, the strain relaxation mechanism of the compositionally undulating step-graded InAsP buffer is analyzed. The buffer layer can release 84% of the mismatch strain at a single-layer thickness of 150 nm. The room temperature photoluminescence wavelengths of In0.53Ga0.47As and In0.68Ga0.32As are 1.69μm and 2.05 μm, respectively. The conversion efficiencies of the 0.73 eV and 0.6 eV InGaAs TPV cells are 12.38% and 8.41%, respectively, at the AM1.5G standard spectrum. However, at 1323 K radiation temperature, the conversion efficiencies of the 0.6 eV InGaAs TPV cells outperform that of the 0.73 eV InGaAs TPV cells, which are 26.9% and 25.4% respectively after being calibrated with the blackbody radiation formula. A prototype system of thermophotovoltaic is set up by series-parallel connection of InGaAs TPV cells. It achieves output power about 5 W at a radiation temperature of 1470 K and completes a stable conversion of thermal radiation energy to electrical energy.

关 键 词：TPV电池 INGAAS 效率 系统 

分 类 号：TM615[电气工程—电力系统及自动化]