多晶硅表面皮秒激光阵列孔绒面制备  

Fabrication of Array Pores on Polysilicon Surface by Picosecond Laser

作　　者：贾天代 冯爱新[1] 陈欢 刘勇 Jia Tiandai; Feng Aixin; Chen Huan; Liu Yong(College of Mechanical and Electrical Engineering, Wenzhou University, Wenzhou, Zhejiang 325035, China)

机构地区：[1]温州大学机电工程学院,浙江温州325035

出　　处：《中国激光》2018年第10期69-76,共8页Chinese Journal of Lasers

基　　金：国家自然科学基金(51505236)

摘　　要：为了减小多晶硅表面的反射率,采用皮秒激光在多晶硅片表面制备阵列孔绒面,分析了激光参数对制绒深度的作用机理,优选出实验参数:激光功率为15 W,脉冲频率为25 kHz,扫描速度为0.9 m/s,扫描次数为2。利用优选参数验证了制绒孔距对多晶硅片表面反射率的影响,并通过PC1D软件模拟出不同制绒硅片的开路电压和短路电流。结果表明,当孔距为30μm时,多晶硅表面形成的孔最为紧密,形貌最好,其孔密度为1.17×10~5 counts·cm^(-2),表面反射率为6.95%,多晶硅电池光-电转化效率提升至18.45%。In order to reduce the reflectivity of polysilicon surface, a picosecond laser is adopted to fabricate array pores on the polysilicon surface. The action mechanism of each laser parameter on the texturing depth is analyzed and the optimal experimental parameters with laser power of 15 W, pulse frequency of 25 kHz, scanning speed of 0.9 m/s and scanning times of 2 are chosen. Based on these optimal parameters, the influence of textured pore pitch on the polysilicon surface reflectivity is verified, and the open-circuit voltage and the short-circuit current of different textured silicon wafers are simulated by the PC1D software. The results show that, there exist the most compact pores with the best morphology on the polysilicon surface when the pore pitch is 30 μm. The pore density is 1.17×10^5 counts·cm^-2, the surface reflectivity is 6.95% and the photoelectric conversion efficiency of the polysilicon battery is increased to 18.45%.

关 键 词：激光技术 激光制绒 阵列孔 时域有限差分(FDTD) 多晶硅 反射率 

分 类 号：TN249[电子电信—物理电子学]