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作 者:叶晖 李斌[1] 黄沫 梁振 徐肯[1] YE Hui; LI Bin; HUANG Mo; LIANG Zhen; XU Ken(School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, P. R. China)
机构地区:[1]华南理工大学电子与信息学院,广州510640
出 处:《微电子学》2018年第5期657-662,681,共7页Microelectronics
基 金:国家自然科学基金资助项目(61604044;61571196);中央高校基本科研业务费资助项目(2017MS037)
摘 要:提出了一种应用于TDD射频收发机的本振泄漏片上数字补偿技术。在发射机中数模转换器前级的数字模块中插入一个数字预补偿单元,结合数字模块中的直流测量电路和补偿参数检测控制电路,构建了对发射机的本振泄漏进行补偿的负反馈回路。上电初始化校准模式下,在数字域中对本振泄漏信号进行功率检测,采用逐次逼近算法精确提取了补偿参数。应用该数字补偿技术,采用IBM 0.13μm RF CMOS工艺实现了一种直接变频结构TDD-LTE射频收发芯片。仿真和测试结果表明,该射频收发芯片的本振泄漏抑制达到61dB。A novel on-chip digital compensation technique for LO leakage in TDD RF transceiver was proposed.The digital pre-compensation for I and Q paths was inserted into the transmitter digital block before DAC.Combined with a DC offset measurement circuit and a digital compensation parameter detecting circuit in the RX(receiver),the negative feedback loops for transmitter LO leakage were constructed.With the detected power of LO leakage in digital domain,the I and Q compensation parameters could be accurately extracted by SAR method in calibration mode while the transceiver started up.The proposed digital compensation technique had been used to implement a direct-conversion TDD-LTE transceiver in IBM 0.13μm RF CMOS process.The simulation and measurement results showed that the LO leakage suppression of the proposed transceiver was 61 dB.
分 类 号:TN929.5[电子电信—通信与信息系统]
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