CMP工艺对Co/Cu去除速率及速率选择比的影响研究  

Study on the Effect of CMP Process on Removal Rate and Removal Rate Selection Ratio of Co/Cu

作　　者：季军 何平[3] 潘国峰 王辰伟 张文倩 杜义琛 JI Jun; HE Ping; PAN Guofeng; WANG Chenwei; ZHANG Wenqian; DU Yichen(School of Electronic Information Engineering , Hebei University of Technology, Tianjin 300130, P. R. China ; Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130, P. R. China; School of Computer Science and Engineering, Hebei University of Technology, Tianjin 300130, P. R. China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130 [3]河北工业大学计算机科学与软件学院,天津300130

出　　处：《微电子学》2018年第5期699-704,共6页Microelectronics

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2016ZX02301003-004-007);河北省青年自然科学基金资助项目(F2015202267);河北省高等学校科学技术研究重点项目(ZD2016123)

摘　　要：化学机械抛光(CMP)工艺中,选用了固定的抛光液组分,即3%体积百分比的FA/O型螯合剂、3%体积百分比的FA/O I型非离子表面活性剂、5% SiO_2。首先研究了不同抛光工艺参数,包括抛光压力、抛光头/抛光盘转速、抛光液流量等,对Co/Cu去除速率及选择比的作用机理。然后采用4因素、3水平的正交试验方法对抛光工艺进行优化实验,得到了较佳的工艺参数。在抛光压力为13.79kPa、抛光头/抛光盘转速为87/93r/min、抛光液流速为300mL/min的条件下,Co/Cu的去除速率选择比为3.26,Co和Cu的粗糙度分别为2.01、1.64nm。The mechanism of different polishing process parameters including polishing pressure,polishing head/plate speed and polishing solution flow rate on the removal rate and selection ratio of cobalt/copper were firstly studied in the slurry containing 3%（in volume）FA/O chelating agent,3%（in volume）FA/O I surfactant and 5% SiO2.Then,the 4 factor 3 level orthogonal experimental methods were used to optimize the polishing process.The optimum process parameters were obtained through the orthogonal experiment：polishing pressure as 13.79 kPa,the polishing head/plate speed as 87/93 r/min,polishing solution flow rate as 300 mL/min.The selection ratio of Co/Cu removal rate in the polishing process reached 3.26,and the roughness of Co,Cu was 2.01 nm,1.64 nm respectively.

关 键 词：钴 铜 化学机械抛光工艺 正交试验 去除速率 速率选择比 

分 类 号：TN350.2[电子电信—物理电子学]