新型阻挡层材料钌的研究进展  

Research Progress of Ruthenium as a New Barrier Material

作　　者：王子艳 周建伟 张佳洁 王庆伟 王辰伟 Wang Ziyan;Zhou Jianwei;Zhang Jiajie;Wang Qingwei;Wang Chenwei(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《微纳电子技术》2018年第12期863-869,共7页Micronanoelectronic Technology

基　　金：国家中长期科技发展规划02科技专项(2009ZX02308)

摘　　要：随着集成电路特征尺寸不断缩小到14 nm及以下,钌凭借其低的电阻率、对铜高的依附性而被考虑替代传统阻挡层材料Ta/TaN。但是,钌作为阻挡层材料依然存在很多问题,如低去除速率、容易引起铜的界面腐蚀、铜钌去除的不均匀性。针对以上问题,主要从三个方面介绍了近几年的研究进展。首先,介绍了氧化剂及络合剂对钌去除速率的影响;然后,总结了针对铜钌界面腐蚀问题的研究进展;最后,阐述了国内外解决铜钌去除速率选择性问题的研究进展。此外,提出未来新型阻挡层钌的抛光液的研究应综合解决上述问题,而非单一解决,才能真正应用于生产领域。As the integrated circuit feature size continuously shrinks to 14 nm and below, ruthe- nium （Ru） is considered to replace the traditional barrier material Ta/TaN due to its low resisti- vity and high dependence on copper. However, there are many problems with Ru as a barrier material, such as low removal rate, easily causing the interface corrosion of copper （Cu）, and non-uniformity of Cu/Ru removal. In view of the above issues, the research progress in recent years is mainly introduced from three aspects. Firstly, the effects of oxidizing agents and comple- xing agents on the removal rate of Ru are introduced. Then, the research progress of the interface corrosion of Cu/Ru is summarized. Finally, the research progress of the removal rate selectivity of Cu/Ru at home and abroad is described. In addition, it is proposed that the research on the new type slurry of barrier Ru in the future should focus on the comprehensive solution to the above problems, rather than a single solution, and Ru as a barrier material can be truly applied to the production field.

关 键 词：钌(Ru) 化学机械抛光(CMP) 去除速率 电偶腐蚀 去除速率选择性 

分 类 号：TN305.2[电子电信—物理电子学]