外电场辅助化学气相沉积方法制备网格状β-Ga_2O_3纳米线及其特性研究  

Growth and characterization of grid-like β-Ga_2O_3 nanowires by electric field assisted chemical vapor deposition method

作　　者：冯秋菊[1] 李芳[1] 李彤彤[1] 李昀铮 石博 李梦轲[1] 梁红伟[2] Feng Qiu-Ju1;Li Fang1;Li Tong-Tong1;Li Yun-Zheng1;Shi Bo1;Li Meng-Ke1;Liang Hong-Wei2

机构地区：[1]辽宁师范大学物理与电子技术学院,大连116029 [2]大连理工大学微电子学院,大连116024

出　　处：《物理学报》2018年第21期360-365,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61574026;11405017);辽宁省自然科学基金(批准号:201602453)资助的课题~~

摘　　要：利用外电场辅助化学气相沉积(CVD)方法,在蓝宝石衬底上制备出了由三组生长方向构成的网格状β-Ga_2O_3纳米线.研究了不同外加电压大小对β-Ga_2O_3纳米线表面形貌、晶体结构以及光学特性的影响.结果表明:外加电压的大小对样品的表面形貌有着非常大的影响,有外加电场作用时生长的β-Ga_2O_3纳米线取向性开始变好,只出现了由三组不同生长方向构成的网格状β-Ga_2O_3纳米线;并且随着外加电压的增加,纳米线分布变得更加密集、长度明显增长.此外,采用这种外电场辅助的CVD方法可以明显改善样品的结晶和光学质量.Gallium oxide（Ga2O3） has five crystalline polymorphs, i.e. corundum（α-phase）, monoclinic（β-phase）, spinel（γ-phase）, bixbite（δ-phase） and orthorhombic（ε-phase）. Among these phases, the monoclinic structured β-Ga2O3 is the most stable form, and is a ultraviolet（UV） transparent semiconductor with a wide band gap of 4.9 eV. It is a promising candidate for applications in UV transparent electrodes, solar-blind photodetectors, gas sensors and optoelectronic devices. In recent years, one-dimensional（1D） nanoscale semiconductor structures, such as nanowires,nanobelts, and nanorods, have attracted considerable attention due to their interesting fundamental properties and potential applications in nanoscale opto-electronic devices.Numerous efforts have been made to fabricate such devices in 1D nanostructures such as nanowires and nanorods.Comparing with the thin film form, the device performance in the 1D form is significantly enhanced as the surfaceto-volume ratio increases. In order to realize β-Ga2O3 based nano-optoelectronic devices, it is necessary to obtain controlled-synthesis and the high-quality β-Ga2O3 nanomaterials. According to the present difficulties in synthesizingβ-Ga2O3 nanomaterials, in this paper, the grid-like β-Ga2O3 nanowires are prepared on sapphire substrates via electric field assisted chemical vapor deposition method.High-purity metallic Ga（99.99%） is used as Ga vapor source. High-purity Ar gas is used as carrier gas. The flow rate of high-purity Ar carrier gas is controlled at 200 sccm. Then, oxygen reactant gas with a flow rate of 2 sccm enters into the system. The temperature is kept at 900℃ for 20 min. The effect of the external electric voltage on the surface morphology, crystal structure and optical properties of β-Ga2O3 nanowires are investigated. It is found that the external electric voltage has a great influence on the surface morphology of the sample. The orientation of the β-Ga2O3 nanowires grown under the action of an applied electric

关 键 词：外电场 化学气相沉积 β-Ga2O3 纳米线 

分 类 号：TB383.1[一般工业技术—材料科学与工程]