电化学湿法腐蚀法制备硅微柱阵列  

Fabrication of silicon micro-tip arrays using wet electrochemical etching method

作　　者：李鑫[1] 罗洁[1] 任丁[1] LI Xin;LUO Jie;REN Ding(Key Laboratory of Radiation and Technology of Education Ministry of China,Institute of Nuclear Science andTechnology,Sichuan University,Chengdu 610064,China)

机构地区：[1]四川大学原子核科学技术研究所,辐射物理及技术教育部重点实验室,四川成都610064

出　　处：《电子元件与材料》2018年第11期26-30,共5页Electronic Components And Materials

基　　金：国家自然科学基金青年科学基金(11005076,11305029)

摘　　要：采用TMAH (Tetramethyl Ammonium Hydroxide)腐蚀液在P(100)硅片上制备倒棱台,进而采用电化学湿法刻蚀法制备具有微柱结构的阵列器件。借鉴N型多孔硅的形成理论,提出了微柱的形成模型,分析了微柱的形成条件,并对其主要的几何结构参数之间的关系进行了探讨。结果表明微柱的形成与倒棱台的结构参数、孔的结构参数以及空间电荷区等因素相关。倒棱台的底面尺寸决定了微柱的结构,且倒棱台开口的大小需要大于平均孔径。微柱直径始终小于2倍的空间电荷区宽度。微柱内载流子的耗尽是微柱未被刻蚀的主要原因。TMAH anisotropic wet etching was applied for the fabrication of ITPN （invert truncated pyramid notch） on P （100）silicon substrate, and then the silicon micro-tip array was prepared using HF anode electrochemical etching. In order to investigate theformation process, a silicon micro-tip formation model was developed based on the formation mechanism of N type porous silicon.The relationships among the geometrical structure parameters of the micro-tip were studied. The results indicate that the formation ofmicro-tip is related with the geometrical parameter of ITPN ＆the pores and space charge region （SCR）： the size of the ITPN bottomplane determines the structure of micro-tip, and the window size of ITPN should be larger than the average size of the pores; Thediameter of micro-tips is always smaller than two times of the width of SCR; The formation of micro-tip is primarily due to thedepletion of charger carriers in the micro-tips.

关 键 词：无机非金属材料 硅微尖阵列 倒棱台 微柱形成模型 HF阳极电化学腐蚀 TMAH各向异性湿法腐蚀 

分 类 号：TN403[电子电信—微电子学与固体电子学]