垂直腔面发射激光器湿法氧化工艺的实验研究  

Study on Wet Oxidation Process in Vertical Cavity Surface Emitting Laser

作　　者：李颖 周广正 兰天[1] 王智勇[1] LI Ying;ZHOU Guang-zheng;LAN Tian;WANG Zhi-yong(Institute of Laser Engineering,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学激光工程研究院,北京100124

出　　处：《发光学报》2018年第12期1714-1721,共8页Chinese Journal of Luminescence

基　　金：国家自然科学青年基金(61505003)资助项目~~

摘　　要：在湿法氧化过程中采用一种自制的新型红外光源显微镜和CCD相机俯视成像系统监测被氧化晶圆片上氧化标记点颜色的变化,通过CCD相机得到的氧化标记点尺寸大小与实际氧化标记点尺寸大小的比例计算,由氧化标记点变化颜色的尺寸大小获得实际晶圆被氧化尺寸大小,反馈调节氧化工艺,保证控制垂直腔面发射激光器(VCSELs)的氧化孔径精度在±1μm。根据氧化实验总结高Al组分含量对氧化孔形状影响、氧化速率随温度变化及氧化深度随时间变化规律,得到在炉温420℃、水浴温度90℃、氧化载气N2流量200m L/min的工艺条件下,氧化速率为0. 31μm/min,实现量产高速调制4×25 Gbit/s的850 nm VCSELs。室温条件下,各子单元器件工作电压为2. 2 V,阈值电流为0. 8 m A,斜效率为0. 8 W/A。在6 m A工作电流下,光功率为4. 6 m W。In the wet-oxidation process, we used a new home-made infrared light source microscope and a CCD observer to look down at the imaging system to monitor changes in the color of oxidized spots on the wafer being oxidized. According to this ratio which was calculated by comparing the size of the oxidized point obtained by the CCD camera with the actual oxidation point size, the size of the actual oxidized wafer was obtained by the color change size of the oxidized point. By observing the color change size of the oxidized point, the oxidation process was adjusted to ensure the accuracy of controlling the oxidation aperture of vertical cavity surface emitting lasers（VCSELs） to within ±1 μm. Based on the oxidation experiments, the effect of high Al content on the shape of oxidation pores, the change of oxidation rate with temperature and the change of oxidation depth with time were obtained. When the furnace temperature was 420℃, the temperature of the water bath was 90℃ and the flow rate of the oxidizing gas was 200 mL/min, the oxidation rate was 0.31 μm/min and modulation rate of the 850 nm VCSELs was 4×25 Gbit/s. Room temperature conditions, the sub-unit operating voltage 2.2 V, the threshold current 0.8 mA, the ramp efficiency of 0.8 W/A, when the current was 6 mA, the power was 4.6 mW.

关 键 词：垂直腔面发射激光器 ALXGA1-XAS 湿法氧化 氧化规律 

分 类 号：TN248.4[电子电信—物理电子学]