氮气氛直拉硅中氮氧复合物及其红外吸收  

NITROGEN-OXYGEN COMPLEXES AND THEIR INFRARED ABSORPTION IN CZOCHRALSKI-SILICON GROWN IN NITROGEN ATOMSPHERE

作　　者：刘培东 佘思明[1] 廖平婴 董萍[2] 

机构地区：[1]中南矿冶学院应用物理系 [2]中南矿冶学院测试分析中心

出　　处：《中南矿冶学院学报》1991年第6期696-702,共7页

基　　金：浙江大学高纯硅及硅烷国家重点开放实验室基金

摘　　要：本文分析了掺氮的CZ硅中与氮有关的七条红外吸收峰的形成,指出所谓的“氮氧复合物”实质上是在氮对-硅四面体基础上发展而成的氮对-硅-氧复合体。文章还分析了热处理后的掺氮CZ硅的红外吸收,由此找到了研究硅中氮氧相互作用的一种有效方法。The formation of seven infrared absorption lines associated with nitrogen has been analysed. The so-called 'N-O complexes' are proved to be N_2-Si-O complexes which develop from N_2-Si tetrahedron. The infrared absorption of N-doped CZ-Si after heat treatment has also been discussed. Based on this work, an effective method of studying the interactian of nitrogen and oxygen in silicon is found out.

关 键 词：直接硅 氮氧 复合物 红外吸收 硅 

分 类 号：O613.72[理学—无机化学]