碳化硅吸波性能改进的研究  

Study on property improvement of SiC wave absorbers

作　　者：葛凯勇[1] 王群[1] 张晓宁[1] 毛倩瑾[1] 周美玲[1] 

机构地区：[1]北京工业大学材料科学与工程学院,北京100022

出　　处：《功能材料与器件学报》2002年第3期263-266,共4页Journal of Functional Materials and Devices

基　　金：北京市自然科学基金重点资助项目(No.2991001)

摘　　要：采用三种不同的方法对碳化硅粉在2-18GHz范围的吸波性能进行了改进。化学还原的方法制备出粒度约为0.2μm左右的超细镍粉,与碳化硅混和,在一定的配比下制备成吸波涂层材料,大幅度改善了吸波性能。吸波涂层最小反射率能够达到-23.59dB。提出了微观层复合的设想,并利用化学镀的方法对碳化硅粉表面进行了改性处理,使金属镍沉积在碳化硅颗粒的表面,材料在合理配比下的最小反射率为-22.07dB。采用宏观层复合的方法,将超细镍粉涂层与碳化硅涂层复合制备成多层吸波材料,改善了吸收峰值和吸收带宽。Three different ways were proposed to improve the wave absorbing properties of SiC within the frequency ranges from 2GHz to 18GHz.Adding 10%nickel powder with average size of 0.2μm to 80%of SiC by weight ,the absorbing properties are greatly improved,an d the lowest reflection is-23.59dB at 11.35GHz with the thickn ess of 0.67mm.A microscopic multi -l ayer was prepared by electroless nickel plating on the su rface of SiC particles,which exibits lower reflection of -22.07dB with the thickness of 0.35mm and 60%b y weight at 16.24GHz.Furthermore,b etter characteristics of reflection and broader frequency ranges are obtained by a macroscopic multi -layer constructed with different ranking of nickel and SiC l ayers.

关 键 词：吸波性能 改进 碳化硅 超细粉 化学镀 

分 类 号：TB34[一般工业技术—材料科学与工程]