气体放电管与半导体放电管配合使用方法的分析  

Analysis on Matching Method Between Gas Discharge Tube and Thyristor Surge Suppressors

作　　者：徐黄飞 张其林[1] 蔡露进 薛奇[1] 朱若虚[1] 刘超[1] XU Huangfei;ZHANG Qilin;CAI Lujin;XUE Qi;ZHU Ruoxu;LIU Chao(Collaborative Innovation Center on Forecast and Evaluation of Meteorological Disasters,Nanjing University of Information Science&Technology,Nanjing 210044,China)

机构地区：[1]南京信息工程大学气象灾害预报预警与评估协同创新中心,南京210044

出　　处：《电瓷避雷器》2019年第1期22-30,共9页Insulators and Surge Arresters

基　　金：电网雷电预警技术研究及雷电预警系统开发(编号:K-YN2013-186);配电网综合防雷体系研究与工程示范(编号:YNKJQQ00000274);国家自然科学基金项目(编号:41575004);国家重点基础研发项目(编号:2014CB441405)

摘　　要：针对防雷中半导体放电管(thyristor surge suppressors,TSS)和气体放电管(gas dischargetube,GDT)匹配的性能问题,设计了TSS与GDT配合工作的测试电路。使用(1. 2/50 s、8/20 s)组合波发生器模拟雷电过电压对该测试电路进行冲击试验。试验采取控制变量法,退耦电阻阻值选取2Ω、5Ω、10Ω,TSS工作电压选取6 V、25 V、58 V,GDT直流击穿电压选取90 V、230 V。得出:冲击电压小于GDT击穿电压时,测试电路工作在盲区内,仅有TSS动作;冲击电压超过GDT击穿电压时,TSS与GDT先后动作,GDT泄放的能量要远大于TSS;冲击电压增大超过1 kV时,GDT的动作时延将短于TSS,几乎所有的能量都由GDT泄放; GDT导通后,随着冲击电压的增加,GDT的残压和通流逐渐增大,而TSS的残压和通流逐渐减低并保持在一个较低的状态(残压在5 V左右,通流在7 A左右)。对TSS和GDT的应用有一定的参考意义。According to the issue of matching performance between thyristor surge suppressors( TSS) and gas discharge tube( GDT),a test circuit consists of TSS and GDT is designed. The test circuit is tested by simulate lightning overvoltage produced by( 1. 2/50 s、8/20 s) combined wave generator,the control variable method is taken in the test,the value of decoupling resistance is 2 Ω,5 Ω and 10 Ω,the value of working voltage of TSS is 6 V,25 V and 58 V,the value of DC breakdown voltage of GDT is 90 V and230 V. Conclusions are as follows: the test circuit will work in blind area as the impulse voltage smaller than the breakdown voltage of GDT,only the TSS acts;The TSS and GDT will act successively as the impulse voltage larger than the breakdown voltage of GDT,the energy discharged by GDT is much greater than TSS;The action time delay of GDT will be shorter TSS as the impact voltage larger than 1 kV,almost all of the energy is discharged by GDT;After the action of GDT,with the increase of impulse voltage,the residual voltage and current of GDT will increase gradually,while the residual voltage and current of TSS will decrease gradually and keep in a low state( the residual voltage is 5 V,the current is 7 A). It has reference significance to the application of TSS and GDT.

关 键 词：半导体放电管 气体放电管 盲区 通流 残压 

分 类 号：TM862[电气工程—高电压与绝缘技术]