Novel p-Channel Selected n-Channel Divided Bit-Line NOR Flash Memory Using Source Induced Band-to-Band Hot Electron Injection Programming  

采用源极增强带带隧穿热电子注入编程的新型p沟选择分裂位线NOR快闪存贮器(英文)

作　　者：潘立阳[1] 朱钧[1] 刘楷[1] 刘志宏[1] 曾莹[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《Journal of Semiconductors》2002年第10期1031-1036,共6页半导体学报（英文版）

基　　金：国家九五计划资助项目 (No.97 76 0 0 1 0 1)~~

摘　　要：A novel p-channel selected n-channel divided bit-line NOR(PNOR) flash memory,which features low programming current,low power,high access current,and slight bit-line disturbance,is proposed.By using the source induced band-to-band hot electron injection (SIBE) to perform programming and dividing the bit-line to the sub-bit-lines,the programming current and power can be reduced to 3.5μA and 16.5μW with the sub-bit-line width equaling to 128,and a read current of 60μA is obtained.Furthermore,the bit-line disturbance is also significantly alleviated.提出一种新型的PMOS选择分裂位线NOR结构快闪存贮器 ,具有高编程速度、低编程电压、低功耗、高访问速度和高可靠性等优点 .该结构采用源极增强带带隧穿热电子注入进行编程 ,当子位线宽度为 12 8位时 ,位线漏电只有 3 5 μA左右 ,每位编程功耗为 16 5 μW ,注入系数为 4× 10 -4 ,编程速度可达 2 0 μs,存贮管的读电流可达 6 0 μA/ μm以上 .分裂位线结构和低编程电压使得该结构具有很好的抗位线串扰特性和可靠性 .

关 键 词：flash memory DINOR band-to-band SIBE disturbance 

分 类 号：TP333.5[自动化与计算机技术—计算机系统结构]