纳米级MOSFET衬底电流的偏置依赖性建模  

Bias dependent modeling of substrate current of nanoscale MOSFET

作　　者：王林[1] 王军[1] 王丹丹[1] 

机构地区：[1]西南科技大学信息工程学院,四川绵阳621010

出　　处：《电子技术应用》2016年第10期37-39,共3页Application of Electronic Technique

摘　　要：衬底电流是纳米级MOSFET电学性质分析的重要基础,也是集成电路设计的先决条件。建立精确的衬底电流模型是分析MOSFET器件及电路可靠性和进行电路设计所必需的。基于热载流子效应建立了一个常规结构纳米级MOSFET衬底电流的解析模型,并将模型的仿真结果与实验结果相比较,验证了模型的准确性。同时对衬底电流与沟道长度和偏置电压的关系进行了分析研究,结果表明,衬底电流具有显著的沟道长度与偏置依赖性。Substrate current is fundamental for electrical analysis of nanoscale MOSFET and also is a prerequidite for integrated circuit design. For the reliability analysis and the design of MOSFET circuits, it is necessary to model the substrate current accurately. Based on hot- carrier effect, this paper established a substrate current model of conventional nanoscale MOSFET, and simulation results from that model match the experimental results well, which validated the accuracy of the model. Meanwhile the simulated relations of substrate current to channel length, bias voltage are obtained and analyzed, showing that the substrate current has obvious channel length and bias dependence.

关 键 词：衬底电流 纳米级MOSFET 偏置依赖性 

分 类 号：TN4[电子电信—微电子学与固体电子学]