用溅射法制备混合集成电路中的Cr·SiO薄膜电阻器  

Cr·SiO Thin-film Resistors of Hybrid Integrated Circuits Fabricated by use of Sputtering method

作　　者：王军峰[1] 殷小莉[1] 陈福山[1] 

机构地区：[1]西安微电子技术研究所,陕西西安710054

出　　处：《电子元器件应用》2002年第8期46-47,58,共3页Electronic Component & Device Applications

摘　　要：介绍应用溅射工艺制备Cr·SiO薄膜电阻器的方法,通过大量的实验及不断的工艺优化,制备出了高精度、高稳定性、低TCR的HIC中的薄膜电阻器基片,并已投入批量生产。The methods for Cr·SiO thin-film resistors fabricated by use of sputtering technology are described. The thin-film resistors substrates having high accuracy, high reliability and low TCR for hybrid integrated circuits are manufactured through a lot of experiments and process optimizing, and mass production is launched.

关 键 词：Ci·SiO薄膜电阻器 混合集成电路 溅射 TCR 

分 类 号：TN45[电子电信—微电子学与固体电子学] TM544[电气工程—电器]