碲镉汞体材料的显微Raman光谱  

Micro-Raman Spectra of Hg_(1-x)Cd_xTe Bulk Crystals

作　　者：黄晖[1] 唐莹娟[1] 许京军[2] 张存洲[2] 潘顺臣[1] 张光寅[2] 

机构地区：[1]昆明物理研究所,云南昆明650223 [2]南开大学物理科学学院光子学中心,天津300071

出　　处：《红外技术》2002年第5期37-41,共5页Infrared Technology

摘　　要：利用Raman显微镜测量了ACRT Bridgman方法和Te溶剂方法生长的碲镉汞体材料的显微Raman光谱 ,在碲镉汞体材料的显微Raman光谱中识别出了碲镉汞的基本光学振动模 ,由此证明了碲镉汞按晶格振动的分类方法属于二模混晶 ;识别出了一个来源于类HgTe的TO1模 +LO1模的二级Raman散射峰 ;观察到了碲镉汞体材料中两个新的Raman散射峰 ,分别位于 6 6 2cm- 1和 74 9cm- 1;观察到了碲镉汞基本光学振动模的TO1模与LO1模的Raman散射强度比的变化 ,指出该现象是由于RaThe basic phonon vibrations in MCT were recognized in the micro Raman spectra of MCT bulk crystals: The HgTe like TO 1 and LO 1 phonon vibrational modes located at 121 cm -1 and 139 cm -1 , respectively. The CdTe like TO 2 and LO 2 phonon vibrational modes located nearby 154 cm -1 . A Raman shift at 260 cm -1 was proposed to belong to the two phonon mode TO 1+LO 1. Therefore we can confirm that MCT belongs to two mode mix crystal. Two new Raman peaks at 662 cm -1 and 749 cm -1 were observed in MCT bulk material. The intensity ratio of TO 1 and LO 1 in MCT was observed to be different which was explained in terms of the different Raman geometry arrangement.

关 键 词：碲镉汞晶体 显微Raman光谱 光学振动膜 RAMAN散射 

分 类 号：TN213[电子电信—物理电子学]