退火处理对激光诱导化学气相沉积制备纳米硅红外光谱的影响  

The Effect of Annealing Treatment on the IR Absorption of the Nanosized Silicon Prepared by Laser-Induced Chemical Vapour Deposition

作　　者：张海燕[1] 陈可心[2] 刘颂豪[2] 梁礼正[1] 王卫乡[2] 

机构地区：[1]广东工业大学应用物理系,广东广州510090 [2]华南师范大学量子电子学研究所,广东广州510631

出　　处：《中山大学学报（自然科学版）》2000年第S2期169-173,共5页Acta Scientiarum Naturalium Universitatis Sunyatseni

摘　　要：研究激光诱导化学相沉积（ＬＩＣＶＤ）法制备纳米硅粒子的工艺过程，分析了影响纳米硅形成及尺寸的主要工艺参数，获得了最佳的工艺条件并讨论了退火处理对纳米硅红外光谱各吸收峰的强度。The effect of preparation parameters on the formation and the particle size of nanosized sili con produced by laser-induced chemical vapour deposition (LICVD) was studied. We obtained the op timum synthesis pinters for preparation of the right sized nano-Si powder produced by LICVD. The effect of diffent annealing treatments on the position and intensity of infrared (IR) ahsorption band for the nanosized silicon was also investigated.

关 键 词：纳米硅 激光诱导化学气相沉积(LICVD) 红外光谱 

分 类 号：N55[自然科学总论]