单电子晶体管的制备、集成与电路研究  

Fabrication, Integration and Circuits of Single - electron Transistors

作　　者：王太宏[1] 

机构地区：[1]中国科学院物理研究所,北京100080

出　　处：《微电子技术》2002年第5期6-10,共5页Microelectronic Technology

基　　金：国家重点基础研究专项经费资助(No.G2001CB3095);国家自然科学基金(批准号:69925410和19904015)

摘　　要：我们制备出了高温Si单电子晶体管,研究了单电子晶体管的集成原理,实现了14个单电子晶体管的串联集成和2个单电子晶体管的并联集成。同时也研究了单电子晶体管与传统高迁移率晶体管的集成方法和技术,发现可用单个电子来调控传统晶体管的栅对源漏极电流的控制能力(跨导),利用单电子晶体管的集成方法,建立了对电荷超敏惑的探测技术(包括超敏感的库仑计),实现了单电子存储器中的单电子过程的探测,并设计了一种新型的多值存储器。The silicon single - electron transistors have been fabricated. A citcuit with 14 single- electron transistors in series and one with 2 single - electron transistors in parallel have been realized. The integration of a single - electron transistor with a traditional transistor of high mobility has been investigated; it is found that a single - electron transistor can control the operation of the transistor of high mobility. Based oin this, a supersensitive technique to detect charges has been developed. The single-electron process in a memory has been detected, and a novel multi - value memory has also been designed.

关 键 词：单电子晶体管 制备 单电子存储器 多值存储器 晶体管电路 

分 类 号：TN710.2[电子电信—电路与系统]