量子阱结构的等效宽度新公式  

A Novel Formula of Effective Width of Quantum Well Structrures

作　　者：周小平[1] 周剑英[1] 杨爱龄[1] 李锡华[1] 江晓清[1] 王明华[1] 

机构地区：[1]浙江大学信息与电子工程学系,浙江杭州310027

出　　处：《光电子．激光》2002年第9期881-884,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目 (698770 17;60 1770 12 )

摘　　要：在有效质量近似下 ,分析了 Ga As/ Ga Al As量子阱结构中有限深势阱 (FPB)和理想的无限深势阱(IPB)的粒子的基态能级 ,得到零电场下等效宽度与阱真实宽度之间的显式表达式 ,发现结果与前人的数据吻合得很好 ;进一步的分析表明 ,该公式在非零电场下仍然适用 ,并从波函数角度进行了论证。Under the effective mass approximation,an explicit formula is obtained concerning the correlations between the GaAs/GaAlAs quantum well widths of finite potential barrier(FPB) structure and those of infinite potential barrier(IPB) structure under the condition that the ground state energies are equal at zero bias states.The results derived from it match well with the results given by others.Then the influences of applied fields on the ground state energies and envelope wave functions are analyzed,verifying the rationality of using the formula at nonzero bias states.

关 键 词：量子阱 等效宽度 GAAS/GAALAS 有限深势阱 无限深势阱 FPB IPB 

分 类 号：TN303[电子电信—物理电子学]