电沉积法制备SnS薄膜  

SnS Thin Films Prepared by Electrodeposition

作　　者：杜金会[1] 于振瑞[1] 张加友[1] 杨嘉[1] 郭淑华[2] 

机构地区：[1]军事交通学院基础部,天津300161 [2]南开大学化学学院,天津300071

出　　处：《光电子．激光》2002年第9期889-892,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目 (5 0 172 0 61)

摘　　要：采用了电沉积法在 Sn O2 透明导电玻璃上制备了硫化锡 (Sn S)薄膜 ,并对用电化学法实现 Sn和 S共沉积的条件参数进行了理论探讨。实验中 ,利用 Sn Cl2 和 Na2 S2 O3的混合水溶液作为电沉积液制备了均匀的 Sn S薄膜 ,对实验参数进行了优化。对薄膜进行了 X-射线衍射 (XRD)、扫描电子显微 (SEM)测量及光学测试。实验发现 ,制备的薄膜为多晶的斜方晶系结构 ,晶粒大小约为 15 0 nm,直接光学带隙在 1.36～ 1.73eSnS thin films on tin oxide transparent conducting glass substrates were prepared by electrodeposition method from aqueous solution containing SnCl2 ad Na2S2O3. The mechanism of electro-chemical co-deposition of tin and sulphur was explored, and the influence of fabrication condition (such as the concentration ratio of SnCl2 and Na2S2O3, pH value and electric current density) on the structural and optical properties of the films was also studied. The samples were characterized with XRD, SEM and optical measurements. The as-deposited films are of polycrystalline with orthorhombic crystalline structure and grain size of about 150 nm. The optical direct band of 1.36-1.73 eV can be adjusted by changing the deposition parameters.

关 键 词：SnS薄膜 太阳能电池 电沉积法 光学带隙 硫化锡薄膜 

分 类 号：TM914.4[电气工程—电力电子与电力传动] O484.1[理学—固体物理]