H^+辐照前后C-SiC涂层的XPS分析  

XPS analysis for the C-SiC coatings before and after H^+ ion irradiation

作　　者：熊器[1] 杨斌[2] 刘耀光[3] 汪德志[2] 黄宁康[2] 雷家荣[3] 

机构地区：[1]南昌航空工业学院教务处,江西南昌330034 [2]四川大学原子核科学技术研究所.教育部辐射物理及技术重点实验室,四川成都610064 [3]中国工程物理研究院核物理与化学所,四川成都610003

出　　处：《南昌航空工业学院学报》2002年第3期33-37,共5页Journal of Nanchang Institute of Aeronautical Technology（Natural Science Edition）

基　　金：获国家自然科学基金 (5 97810 0 2 );中国工程物理研究院科研基金资助

摘　　要：对不锈钢基体上离子束混合沉积的C -SiC涂层进行了H+ 辐照模拟试验 ,由SIMS测量H+ 辐照前后氢的浓试分布 ,采用沟电子能谱 (XPS)对H+ 辐照前后涂层元素C和Si进行了内层电子结合能的测量分析 ,研究C及Si的化学键态的变化与H的关系 。Simulating experiments of H + irradiation were made for the C-SiC coatings deposited by ion beam mixing on stainless steel substrates. Hydrogen depth profiles of SIMS spectra were measured for the specimen before and after H + ion irradiation. XPS was used to analyze the chemical bonding energy for C and Si elements of coatings before and after H + ion irradation. Relationship between the changes of the chemical bond states for the elements of the C-SiC films and hydrogen was studied. Related mechanism of hydrogen resistant property for the C-SiC coatings was discussed.

关 键 词：涂层 XPS 沟电子能谱 碳 碳化硅 薄膜 阻氢性能 

分 类 号：TG174[金属学及工艺—金属表面处理] TB43[金属学及工艺—金属学]