掺杂氧的Ge-Sb-Te相变薄膜的光学性质  

Optical Properties of Oxygen-Doped Ge-Sb-Te Phase-Change Films

作　　者：顾四朋[1] 侯立松[1] 刘波[1] 陈静[2] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800 [2]国家红外物理实验室,中国科学院上海技术物理所,上海200083

出　　处：《光学学报》2002年第9期1137-1140,共4页Acta Optica Sinica

基　　金：国家自然科学基金 (5 9832 0 6 0 )资助课题

摘　　要：研究了氧掺入Ge Sb Te射频溅射相变薄膜在 40 0nm～ 80 0nm区域的光学常数 (n ,κ)和反射、透射光谱 ,发现适当的氧掺入能大大增加退火前后反射率对比度 ,因此可通过氧掺入改良Ge SbOptical properties of monolayer oxygen-doped Ge-Sb-Te thin films prepared by RF-sputtering method were studied in the region of 400 nm～800 nm, including refractive index, extinction coefficient, reflection and transmission spectra. The results indicated that larger reflectivity contrast can be achieved by appropriate doping of oxygen, thus the recording properties of the Ge-Sb-Te film material can be improved by the oxygen-doping.

关 键 词：相变薄膜 Ge-Sb-Te薄膜 氧掺杂 光学性质 光存储 

分 类 号：O484.41[理学—固体物理]