高介电常数材料在半导体存储器件中的应用  

Application of High Dielectric Constant Materials in Memory Devices

作　　者：邵天奇[1] 任天令[1] 李春晓[1] 朱钧[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《固体电子学研究与进展》2002年第3期312-317,共6页Research & Progress of SSE

摘　　要：高介电常数材料是当前微电子行业最热门的研究课题之一。它的应用为解决当前半导体器件尺寸缩小导致的栅氧层厚度极限问题提供了可能性 ,同时利用一些高介电常数材料具有的特殊物理特性 ,可实现具有特殊性能的新型器件。文中主要介绍几类常用的高介电常数材料的特性和制备方法 。Recently, high dielectric constant (high K) materials are paid more and more attention for their great use in microelectronics. It is a possible way to solve the problem of the thin gate oxide limitation faced by semiconductor industry in the future. Some new devices with great value will be realized by using the special properties of some high K materials. The properties and fabricating processes of the high K materials are reviewed in this paper. The application and prospect of high K materials for semiconductor memory devices are proposed.

关 键 词：半导体存储器件 高介电常数材料 铁电体 氮化物 铁电场效应管 

分 类 号：TP333.5[自动化与计算机技术—计算机系统结构]