双极晶体管基极电阻的电流特性  

The Current Dependence of Base Resistance R_B(I_B) of Bipolar Transistor

作　　者：张屏英 刘润民[1] 

机构地区：[1]西安交通大学电子工程系,710049

出　　处：《固体电子学研究与进展》1991年第1期38-43,共6页Research & Progress of SSE

摘　　要：本文针对基极电阻随电流变化的实验事实,根据基区电导调制效应,提出了工作在大电流密度水平时,基极电阻R_B(I_B)的理论模型;根据复合效应分析了小电流段R_B(I_B)的变化关系.实验结果与理论模型一致.A theoretical model is presented to determine the current dependence of base resistance RB(IB) of bipolar transistor at high current, based on the effect of base conductivity modulation. The variation of base resistance RB(IB) at low injection level is analysed according to the effect of surface and the depletion region recombination. The model satisfactorily compares with the experimental results.

关 键 词：双极晶体管 基极电阻 电流特性 

分 类 号：TN322.8[电子电信—物理电子学]