硅外延中自稀释现象的研究  

A Study on the Auto-diluting Phenomenon in Epitaxial Silicon

作　　者：王向武[1] 陆春一[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》1991年第1期55-60,共6页Research & Progress of SSE

摘　　要：本文采用附面层模型,对硅外延中的自稀释现象作了理论分析,分析了生长速率、气体流速及外延生长温度等因素对自稀释的影响.提出了克服自稀释现象的几种方法.In this paper, the auto-diluting phenomenon in epitaxial Si has been studied based on the stagnant layer model. The effect of deposition temperature, growth rate and main streen H2 flow on the auto-diluting is analyzed. Several ways to reduce the auto-diluting are given.

关 键 词：硅 外延生长 稀释现象 

分 类 号：TN304.054[电子电信—物理电子学]