GaAs梁式引线混频管四管堆  

GaAs Beam-lead Ring-Quad Diodes

作　　者：桑群 江关辉[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》1991年第4期261-265,共5页Research & Progress of SSE

摘　　要：本文报道GaAs梁式引线混频管四管堆的研究结果.以半绝缘GaAs单晶为衬底,以NbMo/GaAs接触形成肖特基势垒,用二氧化硅和聚酰亚胺两种介质为钝化保护膜而制成的梁式引线混额管四管堆,其零偏结电容为0.05～0.11pF,串联电阻为3～6Ω,分布电容小于0.10pF,4个单管的一致性较好.将该器件分别用于7.5～18GHz和4～8GHz双平衡混频器中,单边带整机噪声系数分别小于6.6dB和5.0dB(不含中放噪声系数1.5dB),本振功率小于10dBm.Using semi-insulating GaAs single crystal as substrate, NbMo/GaAs contact as Shottcky barrier,and using SiO2 and polyimide coating as protecting film, we have developed a new kind of GaAs beam-lead ring-quad diodes with better electronical uniformity. In the 7.5-18GHz and 4-8GHz double-balance mixers using this device, 6.6dB and 5.0dB noise fig-ures (not including a IF noise figure of 1.5dB) with local power of less than 10dBm have been obtained, respectively.

关 键 词：GAAS 梁式 引线 混频管 四管堆 

分 类 号：TN313.8[电子电信—物理电子学]