组分和热历程对LEC GaAs中深施主能级(EL2)的影响  

Effect of Composition and Thermal History on Deep Doner EL2 in LEC GaAs

作　　者：杨瑞霞[1] 李光平[2] 

机构地区：[1]河北工学院,天津300130 [2]天津电子材料研究所,300220

出　　处：《固体电子学研究与进展》1991年第4期318-323,共6页Research & Progress of SSE

摘　　要：用红外吸收的方法测量了不同组分的原生未掺杂LEC GaAs晶锭不同部位EL2浓度([EL2]),并用热处理后快速冷却的方法模拟晶体生长后冷却过程中的不同阶段,测量分析了各阶段[EL2]的变化.在实验结果的基础上对EL2生成过程及影响其生成的因素进行了讨论.The longitudinal and radial distributions of EL2 in undoped LEG GaAs ingorts with different compositions ware determined by infrared absorption measurement. The changes of EL2 concentrations were analyzed using a fast cooling method after heat treatment to simulate various cooling processec after crystal growth. The generation process of EL2 and the factors affecting the EL2 concentration were also discussed.

关 键 词：GAAS LEC 施主能级 热处理 相关性 

分 类 号：TN304.23[电子电信—物理电子学]