降低SI-GaAs单晶中碳含量的实验研究  

Experimental Investigation on Reducing Carbon Concentration in SI-GaAs Crystal

作　　者：谢自力[1] 夏德谦[1] 陈宏毅[1] 朱志明[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》1991年第4期341-346,共6页Research & Progress of SSE

摘　　要：本文介绍了在国产高压单晶炉中,采取PBN涂层掩蔽碳的措施,利用LEC生长法,生长含碳量低的优质SI-GaAs单晶的工艺和实验结果.结合国内外LEC法生长SI-GaAs单晶降低碳含量的研究报道,讨论了环境中碳杂质沾污的机理及碳对SI-GaAs;单晶性能的影响.This paper introduces the technology and experimental results of growing high quality SI-GaAs with low carbon concentration by adopting LEC technique and employing graphite components coated with pyrolytic boron nitride in a home-made high pressure puller. Refering to the research reports from domestically and abroad on growing low carbon concentration SI-GaAs crystal by LEC technique, the carbon contamination mechanism in the crystal for synthesizing and growing environment and its influence on the characteristics of SI-GaAs crystal are discussed.

关 键 词：SI GAAS 晶体 碳含量 降低 工艺 

分 类 号：TN304.053[电子电信—物理电子学]