用低能电子衍射计算Ni(001)表面化学吸附氧族元素的表面原子层间距  

The Calculation of Surface Atomic Layer Distances of Chemisorption Chalcogen on Ni(001) Surface by Low-Energy-Electron Diffracion

作　　者：蓝田[1] 徐飞岳[1] 

机构地区：[1]成都电讯工程学院微电子技术与电子材料系

出　　处：《化学学报》1989年第2期112-120,共9页Acta Chimica Sinica

摘　　要：用一维能带理论计算了Ni(001)表面化学吸附氧族元素(O、S、Se和Te)的表面原子层间距d_X(X表示O、S、Se和Te)。当表面原子层间距d_O=0.87±0.005A,d_S=1.29±0.01A,d_(Se)=1.44±0.01A和d_(Te)=1.93±0.01A时,LEED谱计算值与实验结果一致。The surface atomic layer distances d_x(X are O, S, Se and Te) of chemisorption of chalcogen family elements on Ni(001) surface was calculated by one-dimensional band theory. It is shown that the calculated LEED spectra is in very good agreement with the experimental result, where the surface atomic layer distances d_o=0.875±0.005A, d_S= 1.29±0.01A, d_(Se)=1.44±0.01A and d_(Te)=1.93±0.01A.

关 键 词：镍 化学吸附 氧族元素 原子层间距 

分 类 号：O647.32[理学—物理化学]