镍铂合金溅射靶材在半导体制造中的应用及发展趋势  

Application and Development Trend of NiPt Alloy Sputtering Target in Semiconductor Manufacturing

作　　者：王一晴[1] 郭俊梅[1] 管伟明[1] 闻明[1] 谭志龙[1] 张俊敏[1] 王传军[1] WANG Yiqing;GUO Junmei;GUAN Weiming;WEN Ming;TAN Zhilong;ZHANG Junmin;WANG Chuanjun(Kunming Institute of Precious Metals, Kunming 650106, China)

机构地区：[1]昆明贵金属研究所,昆明650106

出　　处：《贵金属》2016年第3期87-92,共6页Precious Metals

基　　金：云南省对外科技合作计划项目(2014IA037);云南省战略性新兴产业发展专项;云南省应用基础研究项目(2016F3086)

摘　　要：镍铂合金靶材广泛应用于半导体工业。通过磁控溅射,镍铂合金靶材在硅器件表面沉积并反应生成镍铂硅化物薄膜,实现半导体接触及互连。对镍铂硅化物在肖特基二极管制造和半导体集成电路中的应用进行了分析,综述了镍铂合金结构与性质研究成果及制备方法,提出了镍铂合金靶材高纯化、提高磁透率和控制晶粒度的发展趋势。NiPt alloy sputtering targets have been extensively used in semiconductor manufacturing industry. NiPt alloy films were deposited in the given silicon device via magnetron sputtering of NiPt target. And then the films reacted with silicon at certain temperature to form NiPt silicide which undertook the contact and interconnection function in semiconductor manufacturing. The application and the research status of NiPt alloy sputtering target were analyzed in detail and the development trend was proposed based on the above analysis.

关 键 词：金属材料 镍铂合金薄膜 镍铂硅化物 溅射靶材 半导体 发展趋势 

分 类 号：TG146.33[一般工业技术—材料科学与工程]