温度循环下IGBT瞬态热阻抗退化模型的研究  

Research on Transient Thermal Impedance Degradation Model Under Temperature Cycling of IGBT Power Module

作　　者：姚芳[1] 王少杰[1] 李志刚[1] 陈盛华[1] YAO Fang;WANG Shaojie;LI Zhigang;CHEN Shenghua(School of Electrical Engineering,Hebei University of Technology,Tianjin 300130,China)

机构地区：[1]河北工业大学电气工程学院,天津300130

出　　处：《电气传动》2017年第2期77-80,共4页Electric Drive

基　　金：国家自然科学基金资助项目(51377044);2012年度高校博士点专项科研基金(20121317110008)

摘　　要：瞬态热阻抗是表征IGBT模块热特性的重要参数,瞬态热阻抗的退化可以反映模块材料的退化,因此研究IGBT瞬态热阻抗的退化模型对IGBT状态评估、寿命预测等研究有重大意义。利用温度循环老化实验装置对IGBT进行温度循环冲击老化,再利用瞬态热阻抗测试平台测试老化进程中IGBT的瞬态热阻抗曲线,得到模块的退化情况。最后分析实验结果建立IGBT瞬态热阻抗退化数学模型,得到瞬态热阻抗的退化规律。Transient thermal impedance is an important parameter of IGBT module thermal characterization,thedegradation of transient thermal impedance can reflect the module material degradation.So the research ondegradation model of IGBT transient thermal impedance has great significance to state evaluation and life prediction.Temperature cycle aging experiment device was used to do the temperature cycle impact to IGBT modules aging,andthen transient thermal impedance test platform was used to test the IGBT transient thermal impedance curve underaging process,so as to get the degradation situation.Finally analyzed results and set up the transient thermalimpedance degradation mathematical model and got the degradation rule of transient thermal impedance.

关 键 词：退化模型 瞬态热阻抗 温度循环 绝缘栅双极型晶体管 

分 类 号：TN32[电子电信—物理电子学]