溅射功率对CoFeB薄膜磁与结构特性的影响  

Effects of sputtering power on the magnetic and structural properties of CoFeB films

作　　者：黄亚[1] 徐展[1] 邱于珍 陈传文[1] 庄凤江[1] 苏少坚[1] 王可[1] HUANG Ya;XU Zhan;QIU Yu-zhen;CHEN Chuan-wen;ZHUANG Feng-jiang;Su Shao-jian;WANG Ke(College of Information Science and Engineering, Huaqiao University, Xiamen361021, China)

机构地区：[1]华侨大学信息科学与工程学院,福建厦门361021

出　　处：《磁性材料及器件》2016年第5期8-11,31,共5页Journal of Magnetic Materials and Devices

基　　金：国家自然科学基金资助项目(61505058);福建省自然科学基金计划资助项目(2014J05077);华侨大学高层次人才启动基金资助项目(13BS401);华侨大学中青年教师科研提升资助计划项目(ZQN-YX107)

摘　　要：以不同功率溅射制备了CoFeB合金薄膜样品并在高真空下退火处理。发现低功率生长的薄膜始终具有磁各向同性,而高功率生长的薄膜随着退火温度的升高,由起始的单轴磁各向异性逐渐向磁各向同性转变。X射线衍射分析也印证了CoFeB薄膜随退火温度的升高,薄膜由非晶态逐渐向结晶态转变。当退火温度高于400℃时,低功率生长的CoFeB样品的矫顽力大于高功率生长薄膜的矫顽力。同时发现低功率生长的CoFeB的(110)峰值高于高功率生长的样品峰值,表明低功率生长的薄膜晶粒尺寸更大。CoFeB films were sputtered on Si substrates at different sputtering powers and annealed in a vacuumchamber.We found that the magnetic properties of the films sputtered at lower power are always isotropic before and afterannealing.In contrast,the magnetic properties of the films sputtered at higher power changes from uniaxial anisotropy toisotropy.X-ray diffraction analysis reveals that the structure of thin films changes from amorphous state to nanocrystallineafter annealing.When the annealing temperature is over400℃,the intensity of the(110)peak in the CoFeB film sputteredat lower power is higher than that deposited at higher power.For the CoFeB film sputtered at lower power the grain sizeobtained from Scherrer formula increases faster than that at high power.This is consistent with the finding that coercivityof the film sputtered at lower power is larger than that deposited at higher power after annealing over400℃.

关 键 词：CoFeB薄膜 溅射功率 退火处理 磁性能 

分 类 号：TM27[一般工业技术—材料科学与工程] O484.43[电气工程—电工理论与新技术]