HKMG技术全球相关专利分析  

Global Patent Analysis of HKMG Technology

作　　者：董乐[1] 王建霞[1] Dong Le;Wang Jianxia(Patent Examination Cooperation Center of the Patent office, SIPO, Zhengzhou Henan 450002)

机构地区：[1]国家知识产权局专利局专利审查协作河南中心,河南郑州450002

出　　处：《河南科技》2017年第4期51-53,共3页Henan Science and Technology

摘　　要：本文从专利文献的角度对金属氧化物半导体场效应晶体管中HKMG技术的发展进行了统计分析,介绍了HKMG技术的专利布局情况,为国内相关行业提供参考。The development of HKMG technology of MOSFETs was analyzed from the perspective of patent literaturein this paper,and the patent portfolio of HKMG technology was introduced,which is hoped for providing reference forrelevant industries in our country.

关 键 词：HKMG CMOS 栅极漏电流 专利分析 

分 类 号：TN386-18[电子电信—物理电子学]