P波段1200W脉冲功率LDMOSFET研制  

Development of P band 1200 W pulse power LDMOSFET

作　　者：张晓帆[1] 徐守利[1] 郎秀兰[1] 李晓东[1] ZHANG Xiaofan;XU Shouli;LANG Xiulan;LI Xiaodong(The 13th Research Institute, China Electronic Technology Croup Co., Shijiazhuang 050051, China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《电子元件与材料》2017年第6期75-79,共5页Electronic Components And Materials

摘　　要：基于自主开发的LDMOS工艺平台,研制了一款P波段大功率LDMOSFET器件,并设计了器件的外匹配电路。该器件工作电压50 V,在工作脉宽1 ms、占空比10%的工作条件下,在380~480 MHz带宽内实现宽带输出功率大于1200 W,功率增益大于18 d B,漏极效率大于50%,抗驻波能力大于5:1,表现出了良好的RF性能,实现了国产P波段LDMOS器件1200 W的突破。A P band high power LDMOSFET device was developed under self-developing process platform,and its output matching circuit was designed.Under operating conditions of Vds=50V,pulse width=1ms,pulse operation=10%,the device can deliver the output power of more than1200W with at least18dB of power gain and more than50%of drain efficiency at the frequency band of380-480MHz.The anti VSWR capability of the device is above5:1.The good RF performances are presented.The device achieves a breakthrough in the domestic LDMOSFET of1200W output power at P band.

关 键 词：P波段 脉冲功率 LDMOSFET 巴伦 推挽 内匹配 

分 类 号：TN386[电子电信—物理电子学]