驱动回路参数对碳化硅MOSFET开关瞬态过程的影响  

Impact of Gate-Loop Parameters on the Switching Behavior of SiC MOSFETs

作　　者：王旭东[1] 朱义诚 赵争鸣[1] 陈凯楠[1] Wang Xudong;Zhu Yicheng;Zhao Zhengming;Chen Kainan(State Key Lab of Control and Simulation of Power Systems and Generation Equipments Department of Electrical Engineering Tsinghua University Beijing 100084 China)

机构地区：[1]清华大学电机系电力系统及发电设备安全控制和仿真国家重点实验室,北京100084

出　　处：《电工技术学报》2017年第13期23-30,共8页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金重大项目资助(51490680;51490683)

摘　　要：在电力电子系统中,碳化硅(Si C)MOSFET的开关特性易受系统杂散参数的影响,表现为电磁能量脉冲形态属性的非理想特性,并进一步影响系统效率和可靠性。针对Si C MOSFET,首先分析控制脉冲、驱动脉冲及电磁能量脉冲三者间形态属性的关系,提取影响Si C MOSFET开关瞬态过程的关键参数,即开关过程中的dv/dt和di/dt。基于Si C MOSFET的开关过程,分析驱动回路参数对dv/dt和di/dt的影响,并通过PSpice仿真及搭建Si C MOSFET双脉冲测试实验平台进行分析和比较。在此基础上,对基于驱动回路参数的瞬态控制方法进行对比分析,为实际应用中对Si C MOSFET的开关特性改善提供重要的理论基础。The switching behavior of Silicon Carbide(SiC)MOSFETs is susceptible to theparasitic elements in the system.It manifests non-ideal characteristics of the power pulses,and furtherlimits the system reliability and efficiency.The relationship among the control pulse,the drive pulseand the power pulse is analyzed.Two parameters dv/dt and di/dt are extracted as two critical factorsaffecting the switching behavior of SiC MOSFETs.The impacts of the gate-loop parameters on dv/dtand di/dt are analyzed theoretically and verified through PSpice simulation and experiments.Furthermore,several transient control methods based on the gate-loop parameters are compared,as aguideline for the control of the switching behavior of SiC MOSFETs in real applications.

关 键 词：碳化硅MOSFET 脉冲 杂散参数 开关特性 

分 类 号：TM131.2[电气工程—电工理论与新技术]