MMIC功率放大器中末级合成电路设计研究  

Design and Research of the Final Stage Combiner in GaN MMIC Power Amplifier

作　　者：贾建鹏 史磊 祝大龙 刘德喜 Jia Jianpeng;Shi Lei;Zhu Dalong;Liu Dexi(Beijing Research Institute of Telemetry, Beijing 100094, China)

机构地区：[1]北京遥测技术研究所,北京100094

出　　处：《遥测遥控》2017年第3期66-72,共7页Journal of Telemetry,Tracking and Command

摘　　要：采用100nm AlGaN/GaN HEMT工艺,以尺寸为90μm×8的GaN HEMT作为末级晶体管,研究可工作于Ku波段的功放MMIC末级四路合成电路。选择ADS Momentum作为仿真工具,设计两种末级合成电路,并提出一种改进幅度一致性的设计方法。对两种合成电路的各项指标进行比较,在14GHz^16GHz频段,簇丛式合成电路最大插损1.1d B,输出反射系数优于–18d B;Bus-bar总线合成电路最大插损0.9d B,输出反射系数优于–20d B。This paper studies the final stage four-way synthesis circuit in the amplifier MMIC working at Ku band withthe100nm AlGaN/GaN HEMT process based on the90μm×8GaN HEMT as the final transistor.ADS Momentum is chosen asthe simulation tool,and two kinds of final stage synthesis circuits are designed.A method to improve the amplitudeconsistency is proposed,and the correlated indexes are compared.In the14GHz^16GHz frequency band,the cluster-typesynthesis circuit has the maximum insertion loss of1.1dB,its output reflection coefficient is better than–18dB,the Bus-barcircuit has the maximum insertion loss of0.9dB and its output reflection coefficient is better than–20dB.

关 键 词：功率合成 MMIC ADS MOMENTUM 簇丛式 Bus-bar 

分 类 号：TN73[电子电信—电路与系统]