大功率IGBT模块瞬态热阻的测试方法与装置  

Measurement Method and Device for Transient Thermal Impedance of High Power IGBT Module

作　　者：陆国权[1,2] 李洁[1] 梅云辉[1] 李欣[1] 王磊[3] Lu Guoquan;Li Jie;Mei Yunhui;Li Xin;Wang Lei(School of Materials Science and Engineering,Tianjin University,Tianjin 300350,China;State Key Laboratory of Transient Optics and Photonics,Chinese Academy of Sciences,Xi’an 710119,China;School of Chemical Engineering and Technology,Tianjin University,Tianjin 300350,China)

机构地区：[1]天津大学材料科学与工程学院,天津300350 [2]中国科学院瞬态光学与光子技术国家重点实验室,西安710119 [3]天津大学化工学院,天津300350

出　　处：《天津大学学报（自然科学与工程技术版）》2017年第7期669-675,共7页Journal of Tianjin University：Science and Technology

基　　金：国家高技术研究发展计划(863计划)资助项目(2015AA034501);国家自然科学基金资助项目(61334010);天津市科技支撑计划资助项目(13ZCZDGX01106);瞬态光学与光子技术国家重点实验室开放课题资助项目(SKLST201607)~~

摘　　要：为了表征大功率绝缘栅双极型晶体管(IGBT)模块的瞬态热响应行为,设计并实现了一种基于电学法的IGBT模块瞬态热阻测试装置.通过改变热阻测试装置的加热脉冲持续时间,使其等于不同材料层的热时间常数,控制热流在IGBT模块封装材料中的有效传播路径,进而获得各封装材料的瞬态热阻.此外还具体分析了高低电平转换过程中暂态噪声和边界散热条件对测试结果精度的影响规律.结果表明,该装置具有较好的精确性和重复性,这将有助于准确无损分析器件及不同封装材料在瞬态条件下的散热性能,指导IGBT模块封装结构设计和封装材料选择.To characterize the thermal performance of high power insulated gate bipolar transistor(IGBT)module,atransient thermal impedance measurement device based on the electrical method for IGBT module was designed andbuilt.By changing heating pulse duration of the measurement device equal to the thermal time constants of differentmaterial layers,the effective thermal conduction paths in IGBT module can be controlled and the transient thermalimpedance of each component within the IGBT module can be obtained.In addition,the impacts of the transientnoise in the instant transformation of high-low level and the boundary heat condition on measurement accuracy werediscussed.Results show that the device has good accuracy and repeatability,which will prove useful in analyzing thethermal dispersion performance of different devices and packaging materials under transient conditions accurately andnondestructively and guiding the IGBT module structure design and packaging material selection.

关 键 词：电学法 大功率IGBT模块 瞬态热阻 误差分析 K因子 

分 类 号：TN32[电子电信—物理电子学]