晶体管阵列老炼时结温测量方法研究  

Junction temperature measurement method study for transistor array under burn-in

作　　者：吕贤亮[1] 麻力[1] 任翔[1] 孙明[1] LYU Xianliang;MA Li;REN Xiang;SUN Ming(Research Center of Foundational Product, China Electronics Standardization Institute, Beijing 100176, China)

机构地区：[1]中国电子技术标准化研究院基础产品研究中心,北京100176

出　　处：《电子元件与材料》2017年第9期26-29,共4页Electronic Components And Materials

摘　　要：对PNP晶体管阵列采用矩阵热阻法和温度敏感参数法(TSP)两种结温测量的方法进行对比分析研究,并采用红外热像进行试验验证。结果表明,采用矩阵热阻法可以综合考虑各芯片之间的耦合作用,但由于矩阵热阻法试验程序较为复杂,且需要多次换算,从而较容易引入误差。而温度敏感参数法操作简单,测量准确,可以实现实时监测阵列管工作状态下的结温。According to PNP transistor array,two kinds of junction temperature measurement methods of matrix thermal resistance method and temperature sensitive parameter method(TSP)were analyzed and compared.The results show that the use of matrix thermal resistance method can consider the coupling effect of each chip.However,due to the complexity of the matrix thermal resistance test program,and the need of multiple conversions,it is easier to introduce errors.The temperature sensitive parameter method is simple and accurate,and can realize the junction temperature of the array tube in real time.

关 键 词：晶体管阵列 老炼 结温 温度敏感参数 矩阵热阻 红外热像 

分 类 号：TN307[电子电信—物理电子学]