SiC MOSFET驱动电路设计与实验分析  

Design and Experiment Analysis of Driver Circuit for SiC MOSFET

作　　者：邹世凯 胡冬青[1] 黄仁发 崔志行 梁永生 ZOU Shikai;HU Dongqing;HUANG Renfa;CUI Zhihang;LIANG Yongsheng(College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《电气传动》2017年第9期59-63,共5页Electric Drive

摘　　要：为使SiC MOSFET在应用中安全可靠的工作,通过对SiC MOSFET开关特性的分析,设计了一种SiC MOSFET驱动电路。该电路具有结构简单、实用性强、速度快、输出功率大等特点。另外,在高功率、高频等特殊环境下工作,为了提高SiC MOSFET的可靠性,还对器件过载保护电路进行研究。通过Pspice软件仿真实验,发现过载保护电路可以有效地保护器件不受损坏。最后,搭建双脉冲实验平台,验证驱动电路的基本功能并测试采用不同栅极电阻时对SiC MOSFET开关特性的影响。实验结果表明:该电路具有良好的驱动能力。A driver circuit of SiC MOSFETs with simple structure,high computing speed,and high output power was proposed to make devices more reliable in the application,based on analyzing their switching characteristics.In addition,the overload protection circuit of devices at high frequency and high power using the Pspice was investigated,indicating that it is good at protecting devices from damage.Furthermore,a double pulse test platform was set up to verify the driver circuit,certifying its effectiveness.In particular,the influence of the gate resistance on SiC MOSFETs′switching characteristics was demonstrated.The experimental results show that the driver circuit has a good driver ability.

关 键 词：碳化硅MOSFET 驱动电路 过载保护电路 Pspice仿真软件 双脉冲实验 

分 类 号：TM13[电气工程—电工理论与新技术]